Abstract
In order to create Si nanocrystals we have irradiated amorphous films of SiO by high energy heavy ions.The electron microscope images clearly show crystallites of 15-25Å size formed inside ion traces of ∼200Å diameter. The broad luminescence band observed in the visible is attributed to the radiative recombination of photoexcited carriers confined in the Si crystallites. We are able to control the density and the mean size of the nanocrystals by tuning the irradiation parameters.
Dates
Type | When |
---|---|
Created | 11 years, 5 months ago (March 4, 2014, 6:21 a.m.) |
Deposited | 2 years, 8 months ago (Dec. 7, 2022, 12:47 p.m.) |
Indexed | 6 months ago (Feb. 21, 2025, 5:37 a.m.) |
Issued | 30 years, 7 months ago (Jan. 1, 1995) |
Published | 30 years, 7 months ago (Jan. 1, 1995) |
Published Print | 30 years, 7 months ago (Jan. 1, 1995) |
@article{Roditchev_1995, title={Photoluminescence of Si Nanocrystals Created by Heavy Ion Irradiation of Amorphous SiO Films}, volume={34}, ISSN={1347-4065}, url={http://dx.doi.org/10.7567/jjaps.34s1.34}, DOI={10.7567/jjaps.34s1.34}, number={S1}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Roditchev, Dmitri and Lavallard, Philippe and Gandais, Madeleine and Dooryhee, Eric and Slaoui, Abdelilah and Perriere, Jacques}, year={1995}, month=jan, pages={34} }