DOI: 10.4028/www.scientific.net/ddf.143-147.1053. Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry

Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry

10.4028/www.scientific.net/ddf.143-147.1053

Crossref journal-article

Trans Tech Publications, Ltd.

Defect and Diffusion Forum (2457)

Bibliography

SÃ¶dervall, U., & Friesel, M. (1997). Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry. Defect and Diffusion Forum, 143â147, 1053â1058.

Authors 2

Ulf Södervall (first)
M. Friesel (additional)

References 0 Referenced 15

None

Dates

Type	When
Created	16 years, 5 months ago (March 16, 2009, 6:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 14, 2024, 4:24 p.m.)
Indexed	1 year, 6 months ago (Feb. 14, 2024, 7:03 p.m.)
Issued	28 years, 7 months ago (Jan. 1, 1997)
Published	28 years, 7 months ago (Jan. 1, 1997)
Published Online	28 years, 7 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{S_dervall_1997, title={Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry}, volume={143–147}, ISSN={1662-9507}, url={http://dx.doi.org/10.4028/www.scientific.net/ddf.143-147.1053}, DOI={10.4028/www.scientific.net/ddf.143-147.1053}, journal={Defect and Diffusion Forum}, publisher={Trans Tech Publications, Ltd.}, author={Södervall, Ulf and Friesel, M.}, year={1997}, month=jan, pages={1053–1058} }

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