DOI: 10.4028/www.scientific.net/amr.197-198.302. Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method

Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method

10.4028/www.scientific.net/amr.197-198.302

Crossref journal-article

Trans Tech Publications, Ltd.

Advanced Materials Research (2457)

Abstract

The CaCu3-xZnxTi4O12 (CCZTO) (x=0, 0.06, 0.1, 0.2) ceramics were prepared by Sol–gel method. The XRD pattern shows that crystal structure of the sample with no Zn is basically single-phase. The SEM results indicate that the samples have porous structures and the gain size decreases with the content of Zn increasing. The dielectric properties of CCZTO were analyzed by Agilent 4294A. The experimental results show that the dielectric constants are less than that in other papers reported obviously because of their mesoporous structures. With the little doping amount(x=0.06, 0.1), a sharp decrease happened in the dielectric constant (εr). The higher εr was found when x=0.2, but its dielectric loss (D) had greatly increased and frequency stability of dielectric property became worse. The uniformity of gains was put forward to explain the results which showed great impact on the dielectric constant.

Bibliography

Xu, D., Zhang, C., Cheng, X. N., Fan, Y., Yang, T., & Yuan, H. M. (2011). Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method. Advanced Materials Research, 197â198, 302â305.

Authors 6

Dong Xu (first)
Chen Zhang (additional)
Xiao Nong Cheng (additional)
Yuee Fan (additional)
Tao Yang (additional)
Hong Ming Yuan (additional)

References 17 Referenced 20

Dates

Type	When
Created	14 years, 6 months ago (Feb. 21, 2011, 3:44 p.m.)
Deposited	1 year, 9 months ago (Nov. 28, 2023, 4:40 p.m.)
Indexed	1 year, 2 months ago (June 29, 2024, 10:15 p.m.)
Issued	14 years, 6 months ago (Feb. 21, 2011)
Published	14 years, 6 months ago (Feb. 21, 2011)
Published Online	14 years, 6 months ago (Feb. 21, 2011)

Funders 0

None

BibTeX

@article{Xu_2011, title={Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method}, volume={197–198}, ISSN={1662-8985}, url={http://dx.doi.org/10.4028/www.scientific.net/amr.197-198.302}, DOI={10.4028/www.scientific.net/amr.197-198.302}, journal={Advanced Materials Research}, publisher={Trans Tech Publications, Ltd.}, author={Xu, Dong and Zhang, Chen and Cheng, Xiao Nong and Fan, Yuee and Yang, Tao and Yuan, Hong Ming}, year={2011}, month=feb, pages={302–305} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        6,
        30
      ]
    ],
    "date-time": "2024-06-30T02:15:07Z",
    "timestamp": 1719713707056
  },
  "reference-count": 17,
  "publisher": "Trans Tech Publications, Ltd.",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            21
          ]
        ],
        "date-time": "2011-02-21T00:00:00Z",
        "timestamp": 1298246400000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://www.scientific.net/PolicyAndEthics/PublishingPolicies"
    },
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            21
          ]
        ],
        "date-time": "2011-02-21T00:00:00Z",
        "timestamp": 1298246400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.scientific.net/license/TDM_Licenser.pdf"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "abstract": "<jats:p>The CaCu<jats:sub>3-x</jats:sub>Zn<jats:sub>x</jats:sub>Ti<jats:sub>4</jats:sub>O<jats:sub>12</jats:sub> (CCZTO) (x=0, 0.06, 0.1, 0.2) ceramics were prepared by Sol\u2013gel method. The XRD pattern shows that crystal structure of the sample with no Zn is basically single-phase. The SEM results indicate that the samples have porous structures and the gain size decreases with the content of Zn increasing. The dielectric properties of CCZTO were analyzed by Agilent 4294A. The experimental results show that the dielectric constants are less than that in other papers reported obviously because of their mesoporous structures. With the little doping amount(x=0.06, 0.1), a sharp decrease happened in the dielectric constant (\u03b5<jats:sub>r</jats:sub>). The higher \u03b5<jats:sub>r</jats:sub> was found when x=0.2, but its dielectric loss (D) had greatly increased and frequency stability of dielectric property became worse. The uniformity of gains was put forward to explain the results which showed great impact on the dielectric constant.</jats:p>",
  "DOI": "10.4028/www.scientific.net/amr.197-198.302",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        2,
        21
      ]
    ],
    "date-time": "2011-02-21T20:44:44Z",
    "timestamp": 1298321084000
  },
  "page": "302-305",
  "source": "Crossref",
  "is-referenced-by-count": 20,
  "title": "Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method",
  "prefix": "10.4028",
  "volume": "197-198",
  "author": [
    {
      "given": "Dong",
      "family": "Xu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Jiangsu University"
        }
      ]
    },
    {
      "given": "Chen",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jiangsu University"
        }
      ]
    },
    {
      "given": "Xiao Nong",
      "family": "Cheng",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jiangsu University"
        }
      ]
    },
    {
      "given": "Yuee",
      "family": "Fan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jiangsu university"
        }
      ]
    },
    {
      "given": "Tao",
      "family": "Yang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jiangsu University"
        }
      ]
    },
    {
      "given": "Hong Ming",
      "family": "Yuan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jilin University"
        }
      ]
    }
  ],
  "member": "2457",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "2636699",
      "doi-asserted-by": "crossref",
      "unstructured": "M. A. Subramanian, D. Li, N. Duan, B. A. Reisner and A. W. Sleight, J Solid State Chem, Vol. 151(2000), p.323.",
      "DOI": "10.1006/jssc.2000.8703"
    },
    {
      "key": "2636700",
      "doi-asserted-by": "crossref",
      "unstructured": "C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto and A. P. Ramirez, Science, Vol. 293(2001), p.673.",
      "DOI": "10.1126/science.1061655"
    },
    {
      "key": "2636701",
      "doi-asserted-by": "crossref",
      "unstructured": "S. Y. Chung, I. D. Kim and S. Kang, Nature Mater, Vol. 3(2004), p.774.",
      "DOI": "10.1038/nmat1238"
    },
    {
      "key": "2636702",
      "doi-asserted-by": "publisher",
      "unstructured": "R. Parra, R. Savu, L. A. Ramajo, M. A. Ponce, J. A. Varela, M. S. Castro, P. R. Bueno and E. Joanni, J Solid State Chem, Vol. 183(2010), p.1209.",
      "DOI": "10.1016/j.jssc.2010.03.033"
    },
    {
      "key": "2636703",
      "doi-asserted-by": "crossref",
      "unstructured": "E. Joanni, R. Savu, P. R. Bueno, E. Longo and J. A. Varela, Appl Phys Lett, Vol. 92(2008).",
      "DOI": "10.1063/1.2905810"
    },
    {
      "key": "2636704",
      "doi-asserted-by": "crossref",
      "unstructured": "M. A. Subramanian and A. W. Sleight, Solid State Sci, Vol. 4(2002), p.347.",
      "DOI": "10.1016/S1293-2558(01)01262-6"
    },
    {
      "key": "2636705",
      "doi-asserted-by": "crossref",
      "unstructured": "A. R. West, T. B. Adams, F. D. Morrison and D. C. Sinclair, J Eur Ceram Soc, Vol. 24(2004), p.1439.",
      "DOI": "10.1016/S0955-2219(03)00510-7"
    },
    {
      "key": "2636706",
      "doi-asserted-by": "crossref",
      "unstructured": "T. T. Fang and L. T. Mei, J Am Ceram Soc, Vol. 90(2007), p.638.",
      "DOI": "10.1111/j.1551-2916.2006.01419.x"
    },
    {
      "key": "2636707",
      "doi-asserted-by": "crossref",
      "unstructured": "C. H. Mu, H. W. Zhang, Y. L. Liu, Y. Q. Song and P. Liu, J Rare Earth, Vol. 28(2010), p.43.",
      "DOI": "10.1016/S1002-0721(09)60048-X"
    },
    {
      "key": "2636708",
      "doi-asserted-by": "crossref",
      "unstructured": "T. Li, Z. P. Chen, F. G. Chang, J. H. Hao and J. C. Zhang, J Alloy Compd, Vol. 484(2009), p.718.",
      "DOI": "10.1016/j.jallcom.2009.05.025"
    },
    {
      "key": "2636709",
      "doi-asserted-by": "crossref",
      "unstructured": "Y. H. Lin, J. N. Cai, M. Li, C. W. Nan and J. L. He, Appl Phys Lett, Vol. 88(2006).",
      "DOI": "10.1063/1.2198479"
    },
    {
      "key": "2636710",
      "doi-asserted-by": "crossref",
      "unstructured": "C. H. Mu, H. W. Zhang, Y. He and P. Liu, Physica B, Vol. 405(2010), p.386.",
      "DOI": "10.1016/j.physb.2009.08.093"
    },
    {
      "key": "2636711",
      "doi-asserted-by": "crossref",
      "unstructured": "B. Cheng, Y. H. Lin, J. C. Yuan, J. N. Cai, C. W. Nan, X. Xiao and J. L. He, J Appl Phys, Vol. 106(2009), p.",
      "DOI": "10.1063/1.3194311"
    },
    {
      "key": "2636712",
      "doi-asserted-by": "crossref",
      "unstructured": "L. C. Chang, D. Y. Lee, C. C. Ho and B. S. Chiou, Thin Solid Films, Vol. 516(2007), p.454.",
      "DOI": "10.1016/j.tsf.2007.07.009"
    },
    {
      "key": "2636713",
      "doi-asserted-by": "crossref",
      "unstructured": "P. Jha, P. Arora and A. K. Ganguli, Mater Lett, Vol. 57(2003), p.2443.",
      "DOI": "10.1016/S0167-577X(02)01250-8"
    },
    {
      "key": "2636714",
      "doi-asserted-by": "crossref",
      "unstructured": "L. Marchin, S. Guillemet-Fritsch, B. Durand, A. A. Levchenko, A. Navrotsky and T. Lebey, J Am Ceram Soc, Vol. 91(2008), p.485.",
      "DOI": "10.1111/j.1551-2916.2007.02174.x"
    },
    {
      "key": "2636715",
      "doi-asserted-by": "crossref",
      "unstructured": "M. A. Sulaiman, S. D. Hutagalung, M. F. Ain and Z. A. Ahmad, J Alloy Compd, Vol. 493(2010), p.486.",
      "DOI": "10.1016/j.jallcom.2009.12.137"
    }
  ],
  "container-title": "Advanced Materials Research",
  "original-title": [],
  "link": [
    {
      "URL": "https://www.scientific.net/AMR.197-198.302.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        11,
        28
      ]
    ],
    "date-time": "2023-11-28T21:40:36Z",
    "timestamp": 1701207636000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://www.scientific.net/AMR.197-198.302"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        2,
        21
      ]
    ]
  },
  "references-count": 17,
  "URL": "http://dx.doi.org/10.4028/www.scientific.net/AMR.197-198.302",
  "relation": {},
  "ISSN": [
    "1662-8985"
  ],
  "subject": [],
  "container-title-short": "AMR",
  "published": {
    "date-parts": [
      [
        2011,
        2,
        21
      ]
    ]
  }
}