Abstract
AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.
References
177
Referenced
103
10.1063/1.1641527
10.1109/LED.2008.2004569
10.1016/j.mee.2007.04.021
10.1143/JJAP.44.6981
10.1063/1.1315599
10.1116/1.2197517
10.1063/1.2908223
10.1063/1.1601596
10.1007/978-3-540-71491-0_9
10.1063/1.3120546
10.1063/1.1648016
10.1007/978-3-540-71491-0_15
10.1109/55.924846
10.1063/1.2363145
10.1063/1.2908926
10.1063/1.2912027
10.1063/1.2996261
- 11 Derrick L. , Frosch C.J. , U.S. Patent 2,802,760 (1955).
10.1149/1.2979144
{'key': 'S0883769400003213_ref010', 'first-page': '88', 'volume-title': 'The Story of Semiconductors', 'author': 'Orton', 'year': '2004'}
/ The Story of Semiconductors by Orton (2004)10.1109/IEDM.2002.1175872
10.1116/1.577007
10.1116/1.584273
10.1063/1.1583851
10.1063/1.2968293
10.1103/PhysRevB.48.4612
10.1063/1.107845
10.1149/1.2948386
{'key': 'S0883769400003213_ref096', 'volume-title': 'InGaAs Field Effect Transistors,', 'author': 'Heime', 'year': '1989'}
/ InGaAs Field Effect Transistors, by Heime (1989)10.1002/j.1538-7305.1959.tb03907.x
10.1007/978-1-4684-4835-1
10.1109/TED.2006.875808
10.1016/0040-6090(79)90063-4
10.1063/1.2748308
10.1016/j.mee.2009.03.030
10.1063/1.2793184
10.1116/1.2348887
10.1016/j.mee.2007.04.039
10.1063/1.1810642
10.1149/1.2995832
10.1149/1.2411387
10.1063/1.2961003
{'key': 'S0883769400003213_ref078', 'first-page': '723', 'author': 'Kuzum', 'year': '2007', 'journal-title': 'IEEE IEDM Tech.'}
/ IEEE IEDM Tech. by Kuzum (2007)10.1109/LED.2005.848128
10.1063/1.100642
10.1063/1.1745118
10.1143/JJAP.44.2323
10.1063/1.2218826
10.1063/1.2773759
10.1063/1.2740108
10.1063/1.2679941
10.1063/1.2357566
{'key': 'S0883769400003213_ref098', 'volume-title': 'Surface Analysis by Auger and X-ray Photoelectron Spectroscopy', 'author': 'Briggs', 'year': '2003'}
/ Surface Analysis by Auger and X-ray Photoelectron Spectroscopy by Briggs (2003)10.1016/j.apsusc.2004.10.003
10.1016/j.sse.2004.11.011
{'key': 'S0883769400003213_ref062', 'first-page': '307', 'author': 'Whang', 'year': '2004', 'journal-title': 'IEEE IEDM Tech.'}
/ IEEE IEDM Tech. by Whang (2004)10.4028/www.scientific.net/SSP.134.33
10.1002/cvde.200400021
10.1063/1.1522811
10.1063/1.2164327
10.1116/1.575874
10.1063/1.3025852
- 4 Suntola T. , Antson J. , U.S. Patent 4,058,430 (1975).
10.1063/1.1590743
10.1007/1-4020-3078-9_12
10.1063/1.124661
10.1063/1.2001757
10.1063/1.2790787
10.1007/978-3-540-71491-0_4
10.1016/j.apsusc.2008.02.158
10.1063/1.2991340
- 13 Kilby J.S. , U.S. Patent 3,138,743 (1964).
10.1063/1.2363183
10.1063/1.2741609
10.1063/1.2764438
10.1109/T-ED.1980.19986
10.1063/1.113035
{'key': 'S0883769400003213_ref001', 'first-page': '605', 'volume-title': 'Handbook of Crystal Growth', 'volume': '3', 'author': 'Suntola', 'year': '1994'}
/ Handbook of Crystal Growth by Suntola (1994)10.1063/1.3116624
10.1149/1.2097559
10.1063/1.2987428
10.1109/LED.2007.906436
10.1149/1.2404328
10.1147/rd.504.0377
10.1109/LED.2007.901272
10.1063/1.2798499
10.1149/1.2423861
10.1143/JJAP.35.5964
10.1063/1.2919047
10.1063/1.3006320
10.1103/PhysRev.74.230
10.1016/0040-6090(79)90048-8
10.1063/1.1618382
10.1109/LED.2008.918272
10.1063/1.3025852
/ Appl. Phys. Lett. by Cheng (2008)10.1063/1.345757
10.1063/1.2952830
10.1063/1.125779
10.1021/jp9536763
10.1063/1.2883956
10.1063/1.2806190
- 97 MRS Bull. 27 (3) (2002).
10.1103/PhysRevB.49.11159
10.1063/1.1689732
10.1109/LED.2003.812144
{'key': 'S0883769400003213_ref061', 'first-page': '655', 'author': 'Zimmerman', 'year': '2006', 'journal-title': 'IEEE IEDM Tech.'}
/ IEEE IEDM Tech. by Zimmerman (2006)10.1116/1.586937
10.1063/1.3020298
10.1143/JJAP.46.3167
10.1063/1.3005172
{'key': 'S0883769400003213_ref009', 'first-page': '36', 'volume-title': 'Facets: New Perspectives on the History of Semiconductors', 'author': 'Seidenberg', 'year': '1997'}
/ Facets: New Perspectives on the History of Semiconductors by Seidenberg (1997)10.1149/1.2095836
10.1016/j.mee.2007.04.018
10.1016/S0254-0584(98)00260-0
10.1109/55.29667
10.1007/BF02654592
10.1063/1.1655925
10.1149/1.2095851
{'key': 'S0883769400003213_ref079', 'first-page': '498', 'volume-title': 'Handbook and Chemistry and Physics', 'year': '1952'}
/ Handbook and Chemistry and Physics (1952)10.1149/1.2133083
10.1063/1.2931031
10.1109/LED.2003.823060
{'key': 'S0883769400003213_ref029', 'first-page': '667', 'author': 'Khakifirooz', 'year': '2006', 'journal-title': 'IEEE IEDM Tech. Dig'}
/ IEEE IEDM Tech. Dig by Khakifirooz (2006)10.1063/1.2058226
10.1063/1.1856221
10.1116/1.1688357
10.1063/1.1944227
10.1063/1.2959731
{'key': 'S0883769400003213_ref005', 'first-page': '5', 'volume': '48', 'author': 'Kim', 'year': '2006', 'journal-title': 'J. Korean Phys. Soc.'}
/ J. Korean Phys. Soc. by Kim (2006)10.1149/1.2095924
10.1016/S1369-7021(07)70350-4
10.1016/0039-6028(94)00746-2
10.1063/1.126309
10.1063/1.2338751
10.1109/TED.2007.901261
10.1063/1.2472197
10.1016/S0167-9317(02)00898-5
10.1063/1.1613031
10.1063/1.2829586
10.1149/1.2965495
10.1063/1.2822892
10.1116/1.582331
10.1063/1.2363959
10.1063/1.2883967
10.1063/1.2952826
{'key': 'S0883769400003213_ref163', 'first-page': '363', 'author': 'Goel', 'year': '2008', 'journal-title': 'IEEE Int. Electron Devices Meeting Tech.'}
/ IEEE Int. Electron Devices Meeting Tech. by Goel (2008){'key': 'S0883769400003213_ref164', 'first-page': '637', 'author': 'Xuan', 'year': '2007', 'journal-title': 'IEEE Int. Electron Devices Meeting Tech.'}
/ IEEE Int. Electron Devices Meeting Tech. by Xuan (2007)10.1063/1.3009303
{'key': 'S0883769400003213_ref167', 'first-page': '1036', 'author': 'Li', 'year': '2008', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'}
/ Mater. Res. Soc. Symp. Proc. by Li (2008)10.1557/mrs2002.70
10.1063/1.2405387
10.1063/1.3033404
10.1109/LED.2007.910009
10.1109/LED.2008.2000794
10.1109/LED.2002.801319
10.1063/1.1797564
10.1109/LED.2008.922031
10.1109/LED.2004.827285
10.1063/1.2956393
10.1016/j.mee.2007.04.129
10.1109/TED.2006.875812
- 14 Noyce R.N. , U.S. Patent 2,981,877 (1961).
10.1063/1.2831668
10.1016/j.mseb.2006.08.018
10.1063/1.2146060
10.1063/1.1776636
10.1063/1.2801512
10.1557/mrs2008.221
10.1063/1.1940727
10.1116/1.576091
10.1063/1.1362331
10.1063/1.2966357
10.1016/j.tsf.2007.10.012
10.1016/0040-6090(79)90063-4
10.1063/1.1899745
10.7567/JJAPS.22S1.11
10.7567/JJAPS.18S1.131
Dates
Type | When |
---|---|
Created | 14 years, 6 months ago (Feb. 2, 2011, 7:36 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:13 p.m.) |
Indexed | 11 months, 1 week ago (Sept. 20, 2024, 11:57 a.m.) |
Issued | 16 years, 1 month ago (July 1, 2009) |
Published | 16 years, 1 month ago (July 1, 2009) |
Published Online | 14 years, 7 months ago (Jan. 31, 2011) |
Published Print | 16 years, 1 month ago (July 1, 2009) |
@article{Wallace_2009, title={Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors}, volume={34}, ISSN={1938-1425}, url={http://dx.doi.org/10.1557/mrs2009.137}, DOI={10.1557/mrs2009.137}, number={7}, journal={MRS Bulletin}, publisher={Springer Science and Business Media LLC}, author={Wallace, Robert M. and McIntyre, Paul C. and Kim, Jiyoung and Nishi, Yoshio}, year={2009}, month=jul, pages={493–503} }