Crossref journal-article
Springer Science and Business Media LLC
MRS Bulletin (297)
Abstract

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

Bibliography

Wallace, R. M., McIntyre, P. C., Kim, J., & Nishi, Y. (2009). Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors. MRS Bulletin, 34(7), 493–503.

Authors 4
  1. Robert M. Wallace (first)
  2. Paul C. McIntyre (additional)
  3. Jiyoung Kim (additional)
  4. Yoshio Nishi (additional)
References 177 Referenced 103
  1. 10.1063/1.1641527
  2. 10.1109/LED.2008.2004569
  3. 10.1016/j.mee.2007.04.021
  4. 10.1143/JJAP.44.6981
  5. 10.1063/1.1315599
  6. 10.1116/1.2197517
  7. 10.1063/1.2908223
  8. 10.1063/1.1601596
  9. 10.1007/978-3-540-71491-0_9
  10. 10.1063/1.3120546
  11. 10.1063/1.1648016
  12. 10.1007/978-3-540-71491-0_15
  13. 10.1109/55.924846
  14. 10.1063/1.2363145
  15. 10.1063/1.2908926
  16. 10.1063/1.2912027
  17. 10.1063/1.2996261
  18. 11 Derrick L. , Frosch C.J. , U.S. Patent 2,802,760 (1955).
  19. 10.1149/1.2979144
  20. {'key': 'S0883769400003213_ref010', 'first-page': '88', 'volume-title': 'The Story of Semiconductors', 'author': 'Orton', 'year': '2004'} / The Story of Semiconductors by Orton (2004)
  21. 10.1109/IEDM.2002.1175872
  22. 10.1116/1.577007
  23. 10.1116/1.584273
  24. 10.1063/1.1583851
  25. 10.1063/1.2968293
  26. 10.1103/PhysRevB.48.4612
  27. 10.1063/1.107845
  28. 10.1149/1.2948386
  29. {'key': 'S0883769400003213_ref096', 'volume-title': 'InGaAs Field Effect Transistors,', 'author': 'Heime', 'year': '1989'} / InGaAs Field Effect Transistors, by Heime (1989)
  30. 10.1002/j.1538-7305.1959.tb03907.x
  31. 10.1007/978-1-4684-4835-1
  32. 10.1109/TED.2006.875808
  33. 10.1016/0040-6090(79)90063-4
  34. 10.1063/1.2748308
  35. 10.1016/j.mee.2009.03.030
  36. 10.1063/1.2793184
  37. 10.1116/1.2348887
  38. 10.1016/j.mee.2007.04.039
  39. 10.1063/1.1810642
  40. 10.1149/1.2995832
  41. 10.1149/1.2411387
  42. 10.1063/1.2961003
  43. {'key': 'S0883769400003213_ref078', 'first-page': '723', 'author': 'Kuzum', 'year': '2007', 'journal-title': 'IEEE IEDM Tech.'} / IEEE IEDM Tech. by Kuzum (2007)
  44. 10.1109/LED.2005.848128
  45. 10.1063/1.100642
  46. 10.1063/1.1745118
  47. 10.1143/JJAP.44.2323
  48. 10.1063/1.2218826
  49. 10.1063/1.2773759
  50. 10.1063/1.2740108
  51. 10.1063/1.2679941
  52. 10.1063/1.2357566
  53. {'key': 'S0883769400003213_ref098', 'volume-title': 'Surface Analysis by Auger and X-ray Photoelectron Spectroscopy', 'author': 'Briggs', 'year': '2003'} / Surface Analysis by Auger and X-ray Photoelectron Spectroscopy by Briggs (2003)
  54. 10.1016/j.apsusc.2004.10.003
  55. 10.1016/j.sse.2004.11.011
  56. {'key': 'S0883769400003213_ref062', 'first-page': '307', 'author': 'Whang', 'year': '2004', 'journal-title': 'IEEE IEDM Tech.'} / IEEE IEDM Tech. by Whang (2004)
  57. 10.4028/www.scientific.net/SSP.134.33
  58. 10.1002/cvde.200400021
  59. 10.1063/1.1522811
  60. 10.1063/1.2164327
  61. 10.1116/1.575874
  62. 10.1063/1.3025852
  63. 4 Suntola T. , Antson J. , U.S. Patent 4,058,430 (1975).
  64. 10.1063/1.1590743
  65. 10.1007/1-4020-3078-9_12
  66. 10.1063/1.124661
  67. 10.1063/1.2001757
  68. 10.1063/1.2790787
  69. 10.1007/978-3-540-71491-0_4
  70. 10.1016/j.apsusc.2008.02.158
  71. 10.1063/1.2991340
  72. 13 Kilby J.S. , U.S. Patent 3,138,743 (1964).
  73. 10.1063/1.2363183
  74. 10.1063/1.2741609
  75. 10.1063/1.2764438
  76. 10.1109/T-ED.1980.19986
  77. 10.1063/1.113035
  78. {'key': 'S0883769400003213_ref001', 'first-page': '605', 'volume-title': 'Handbook of Crystal Growth', 'volume': '3', 'author': 'Suntola', 'year': '1994'} / Handbook of Crystal Growth by Suntola (1994)
  79. 10.1063/1.3116624
  80. 10.1149/1.2097559
  81. 10.1063/1.2987428
  82. 10.1109/LED.2007.906436
  83. 10.1149/1.2404328
  84. 10.1147/rd.504.0377
  85. 10.1109/LED.2007.901272
  86. 10.1063/1.2798499
  87. 10.1149/1.2423861
  88. 10.1143/JJAP.35.5964
  89. 10.1063/1.2919047
  90. 10.1063/1.3006320
  91. 10.1103/PhysRev.74.230
  92. 10.1016/0040-6090(79)90048-8
  93. 10.1063/1.1618382
  94. 10.1109/LED.2008.918272
  95. 10.1063/1.3025852 / Appl. Phys. Lett. by Cheng (2008)
  96. 10.1063/1.345757
  97. 10.1063/1.2952830
  98. 10.1063/1.125779
  99. 10.1021/jp9536763
  100. 10.1063/1.2883956
  101. 10.1063/1.2806190
  102. 97 MRS Bull. 27 (3) (2002).
  103. 10.1103/PhysRevB.49.11159
  104. 10.1063/1.1689732
  105. 10.1109/LED.2003.812144
  106. {'key': 'S0883769400003213_ref061', 'first-page': '655', 'author': 'Zimmerman', 'year': '2006', 'journal-title': 'IEEE IEDM Tech.'} / IEEE IEDM Tech. by Zimmerman (2006)
  107. 10.1116/1.586937
  108. 10.1063/1.3020298
  109. 10.1143/JJAP.46.3167
  110. 10.1063/1.3005172
  111. {'key': 'S0883769400003213_ref009', 'first-page': '36', 'volume-title': 'Facets: New Perspectives on the History of Semiconductors', 'author': 'Seidenberg', 'year': '1997'} / Facets: New Perspectives on the History of Semiconductors by Seidenberg (1997)
  112. 10.1149/1.2095836
  113. 10.1016/j.mee.2007.04.018
  114. 10.1016/S0254-0584(98)00260-0
  115. 10.1109/55.29667
  116. 10.1007/BF02654592
  117. 10.1063/1.1655925
  118. 10.1149/1.2095851
  119. {'key': 'S0883769400003213_ref079', 'first-page': '498', 'volume-title': 'Handbook and Chemistry and Physics', 'year': '1952'} / Handbook and Chemistry and Physics (1952)
  120. 10.1149/1.2133083
  121. 10.1063/1.2931031
  122. 10.1109/LED.2003.823060
  123. {'key': 'S0883769400003213_ref029', 'first-page': '667', 'author': 'Khakifirooz', 'year': '2006', 'journal-title': 'IEEE IEDM Tech. Dig'} / IEEE IEDM Tech. Dig by Khakifirooz (2006)
  124. 10.1063/1.2058226
  125. 10.1063/1.1856221
  126. 10.1116/1.1688357
  127. 10.1063/1.1944227
  128. 10.1063/1.2959731
  129. {'key': 'S0883769400003213_ref005', 'first-page': '5', 'volume': '48', 'author': 'Kim', 'year': '2006', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. by Kim (2006)
  130. 10.1149/1.2095924
  131. 10.1016/S1369-7021(07)70350-4
  132. 10.1016/0039-6028(94)00746-2
  133. 10.1063/1.126309
  134. 10.1063/1.2338751
  135. 10.1109/TED.2007.901261
  136. 10.1063/1.2472197
  137. 10.1016/S0167-9317(02)00898-5
  138. 10.1063/1.1613031
  139. 10.1063/1.2829586
  140. 10.1149/1.2965495
  141. 10.1063/1.2822892
  142. 10.1116/1.582331
  143. 10.1063/1.2363959
  144. 10.1063/1.2883967
  145. 10.1063/1.2952826
  146. {'key': 'S0883769400003213_ref163', 'first-page': '363', 'author': 'Goel', 'year': '2008', 'journal-title': 'IEEE Int. Electron Devices Meeting Tech.'} / IEEE Int. Electron Devices Meeting Tech. by Goel (2008)
  147. {'key': 'S0883769400003213_ref164', 'first-page': '637', 'author': 'Xuan', 'year': '2007', 'journal-title': 'IEEE Int. Electron Devices Meeting Tech.'} / IEEE Int. Electron Devices Meeting Tech. by Xuan (2007)
  148. 10.1063/1.3009303
  149. {'key': 'S0883769400003213_ref167', 'first-page': '1036', 'author': 'Li', 'year': '2008', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Li (2008)
  150. 10.1557/mrs2002.70
  151. 10.1063/1.2405387
  152. 10.1063/1.3033404
  153. 10.1109/LED.2007.910009
  154. 10.1109/LED.2008.2000794
  155. 10.1109/LED.2002.801319
  156. 10.1063/1.1797564
  157. 10.1109/LED.2008.922031
  158. 10.1109/LED.2004.827285
  159. 10.1063/1.2956393
  160. 10.1016/j.mee.2007.04.129
  161. 10.1109/TED.2006.875812
  162. 14 Noyce R.N. , U.S. Patent 2,981,877 (1961).
  163. 10.1063/1.2831668
  164. 10.1016/j.mseb.2006.08.018
  165. 10.1063/1.2146060
  166. 10.1063/1.1776636
  167. 10.1063/1.2801512
  168. 10.1557/mrs2008.221
  169. 10.1063/1.1940727
  170. 10.1116/1.576091
  171. 10.1063/1.1362331
  172. 10.1063/1.2966357
  173. 10.1016/j.tsf.2007.10.012
  174. 10.1016/0040-6090(79)90063-4
  175. 10.1063/1.1899745
  176. 10.7567/JJAPS.22S1.11
  177. 10.7567/JJAPS.18S1.131
Dates
Type When
Created 14 years, 6 months ago (Feb. 2, 2011, 7:36 a.m.)
Deposited 4 years, 6 months ago (Feb. 24, 2021, 4:13 p.m.)
Indexed 11 months, 1 week ago (Sept. 20, 2024, 11:57 a.m.)
Issued 16 years, 1 month ago (July 1, 2009)
Published 16 years, 1 month ago (July 1, 2009)
Published Online 14 years, 7 months ago (Jan. 31, 2011)
Published Print 16 years, 1 month ago (July 1, 2009)
Funders 0

None

@article{Wallace_2009, title={Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors}, volume={34}, ISSN={1938-1425}, url={http://dx.doi.org/10.1557/mrs2009.137}, DOI={10.1557/mrs2009.137}, number={7}, journal={MRS Bulletin}, publisher={Springer Science and Business Media LLC}, author={Wallace, Robert M. and McIntyre, Paul C. and Kim, Jiyoung and Nishi, Yoshio}, year={2009}, month=jul, pages={493–503} }