DOI: 10.1557/mrs2004.235. Current Status of Ferroelectric Random-Access Memory

Current Status of Ferroelectric Random-Access Memory

10.1557/mrs2004.235

Crossref journal-article

Springer Science and Business Media LLC

MRS Bulletin (297)

Abstract

AbstractThe current status of ferroelectric random-access memory (FeRAM) technology is reviewed in this article. Presented first is the status of conventional FeRAM, in which the memory cells are composed of ferroelectric capacitors to store the data and cell-selection transistors to access the selected capacitors. Discussed next are recent developments in the field. Pb(Zrx, Ti1–x)O3 (PZT) and SrBi2Ta2O9 (SBT) films are being used to produce 0.13 mμ and 0.18 μm FeRAM cells, respectively, with a stacked capacitor configuration; these cells are easily embedded into logic circuits. A new class of FeRAM called 6T4C—containing static RAM (SRAM) cells composed of six transistors (6T) and four ferroelectric capacitors (4C)—has been commercially produced. This type of FeRAM features a nondestructive readout operation, unlimited read/write cycling, and a fast access time of less than 10 ns. Lastly, the status of field-effect-transistor (FET)-type FeRAM is reviewed, emphasizing that the data retention time of a ferroelectric-gate FET has been improved to more than a month in recent studies.

Bibliography

Arimoto, Y., & Ishiwara, H. (2004). Current Status of Ferroelectric Random-Access Memory. MRS Bulletin, 29(11), 823â828.

Authors 2

Yoshihiro Arimoto (first)
Hiroshi Ishiwara (additional)

References 18 Referenced 188

{'key': 'S0883769400016766_ref008', 'first-page': '171', 'volume-title': 'Symp. VLSI Technologies Dig. Tech. Papers', 'author': 'Nagano', 'year': '2003'} / Symp. VLSI Technologies Dig. Tech. Papers by Nagano (2003)
10.1109/LED.2004.828992
{'key': 'S0883769400016766_ref006', 'first-page': '150', 'volume-title': 'Symp. VLSI Technologies Dig. Tech. Papers', 'author': 'Kanaya', 'year': '2004'} / Symp. VLSI Technologies Dig. Tech. Papers by Kanaya (2004)
10.1109/LED.2002.1004228 / IEEE Electron. Dev. Lett. by Li (2002)
{'key': 'S0883769400016766_ref012', 'first-page': '297', 'volume-title': 'Ferroelectric Thin Films XI', 'author': 'Ishiwara', 'year': '2003'} / Ferroelectric Thin Films XI by Ishiwara (2003)
{'key': 'S0883769400016766_ref003', 'first-page': '175', 'volume-title': 'Symp. VLSI Circuits Dig. Tech. Papers', 'author': 'McAdams', 'year': '2003'} / Symp. VLSI Circuits Dig. Tech. Papers by McAdams (2003)
10.1063/1.124446
11 Ross I.M. U.S. Patent No. 2,791,760 (1957). (10.1136/bmj.2.5047.760)
{'key': 'S0883769400016766_ref001', 'first-page': '403', 'volume-title': 'Proc. IEEE Custom Integrated Circuits Conf.', 'author': 'Masui', 'year': '2003'} / Proc. IEEE Custom Integrated Circuits Conf. by Masui (2003)
{'key': 'S0883769400016766_ref005', 'first-page': '282', 'volume-title': 'Proc. IEEE Int. Solid-State Circuits Conf.', 'author': 'Shiratake', 'year': '2003'} / Proc. IEEE Int. Solid-State Circuits Conf. by Shiratake (2003)
{'key': 'S0883769400016766_ref002', 'volume-title': 'Abs. Int. Conf. Solid State Devices and Materials', 'author': 'Takahashi', 'year': '2004'} / Abs. Int. Conf. Solid State Devices and Materials by Takahashi (2004)
{'key': 'S0883769400016766_ref004', 'first-page': '169', 'volume-title': 'Symp. VLSI Technologies Dig. Tech. Papers', 'author': 'Song', 'year': '2003'} / Symp. VLSI Technologies Dig. Tech. Papers by Song (2003)
{'key': 'S0883769400016766_ref007', 'volume-title': 'International Technology Roadmap for Semiconductors, 2003 Edition (ITRS)', 'year': '2003'} / International Technology Roadmap for Semiconductors, 2003 Edition (ITRS) (2003)
{'key': 'S0883769400016766_ref009', 'first-page': '50', 'volume-title': 'Proc. IEEE Int. Solid-State Circuits Conf.', 'author': 'Yamaoka', 'year': '2004'} / Proc. IEEE Int. Solid-State Circuits Conf. by Yamaoka (2004)
10.1109/LED.2002.1004214
{'key': 'S0883769400016766_ref018', 'first-page': '213', 'volume': '2', 'author': 'Yu', 'year': '2002', 'journal-title': 'J. Semicond. Tech. Sci.'} / J. Semicond. Tech. Sci. by Yu (2002)
10.1143/JJAP.38.2285
10.1109/JSSC.2003.810034

Dates

Type	When
Created	14 years, 6 months ago (Feb. 2, 2011, 7:52 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:06 p.m.)
Indexed	1 day, 13 hours ago (Aug. 27, 2025, 11:40 a.m.)
Issued	20 years, 9 months ago (Nov. 1, 2004)
Published	20 years, 9 months ago (Nov. 1, 2004)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	20 years, 9 months ago (Nov. 1, 2004)

Funders 0

None

BibTeX

@article{Arimoto_2004, title={Current Status of Ferroelectric Random-Access Memory}, volume={29}, ISSN={1938-1425}, url={http://dx.doi.org/10.1557/mrs2004.235}, DOI={10.1557/mrs2004.235}, number={11}, journal={MRS Bulletin}, publisher={Springer Science and Business Media LLC}, author={Arimoto, Yoshihiro and Ishiwara, Hiroshi}, year={2004}, month=nov, pages={823–828} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        27
      ]
    ],
    "date-time": "2025-08-27T15:40:26Z",
    "timestamp": 1756309226452
  },
  "reference-count": 18,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "11",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            1,
            31
          ]
        ],
        "date-time": "2011-01-31T00:00:00Z",
        "timestamp": 1296432000000
      },
      "content-version": "unspecified",
      "delay-in-days": 2282,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        11
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>The current status of ferroelectric random-access memory (FeRAM) technology is reviewed in this article. Presented first is the status of conventional FeRAM, in which the memory cells are composed of ferroelectric capacitors to store the data and cell-selection transistors to access the selected capacitors. Discussed next are recent developments in the field. Pb(Zr<jats:sub>x</jats:sub>, Ti<jats:sub>1\u2013x</jats:sub>)O<jats:sub>3</jats:sub> (PZT) and SrBi<jats:sub>2</jats:sub>Ta<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> (SBT) films are being used to produce 0.13 m\u03bc and 0.18 \u03bcm FeRAM cells, respectively, with a stacked capacitor configuration; these cells are easily embedded into logic circuits. A new class of FeRAM called 6T4C\u2014containing static RAM (SRAM) cells composed of six transistors (6T) and four ferroelectric capacitors (4C)\u2014has been commercially produced. This type of FeRAM features a nondestructive readout operation, unlimited read/write cycling, and a fast access time of less than 10 ns. Lastly, the status of field-effect-transistor (FET)-type FeRAM is reviewed, emphasizing that the data retention time of a ferroelectric-gate FET has been improved to more than a month in recent studies.</jats:p>",
  "DOI": "10.1557/mrs2004.235",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        2,
        2
      ]
    ],
    "date-time": "2011-02-02T12:52:08Z",
    "timestamp": 1296651128000
  },
  "page": "823-828",
  "source": "Crossref",
  "is-referenced-by-count": 188,
  "title": "Current Status of Ferroelectric Random-Access Memory",
  "prefix": "10.1557",
  "volume": "29",
  "author": [
    {
      "given": "Yoshihiro",
      "family": "Arimoto",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Hiroshi",
      "family": "Ishiwara",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        1,
        31
      ]
    ]
  },
  "reference": [
    {
      "key": "S0883769400016766_ref008",
      "first-page": "171",
      "volume-title": "Symp. VLSI Technologies Dig. Tech. Papers",
      "author": "Nagano",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref015",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/LED.2004.828992"
    },
    {
      "key": "S0883769400016766_ref006",
      "first-page": "150",
      "volume-title": "Symp. VLSI Technologies Dig. Tech. Papers",
      "author": "Kanaya",
      "year": "2004"
    },
    {
      "key": "S0883769400016766_ref014",
      "doi-asserted-by": "crossref",
      "first-page": "339",
      "DOI": "10.1109/LED.2002.1004228",
      "volume": "23",
      "author": "Li",
      "year": "2002",
      "journal-title": "IEEE Electron. Dev. Lett."
    },
    {
      "key": "S0883769400016766_ref012",
      "first-page": "297",
      "volume-title": "Ferroelectric Thin Films XI",
      "author": "Ishiwara",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref003",
      "first-page": "175",
      "volume-title": "Symp. VLSI Circuits Dig. Tech. Papers",
      "author": "McAdams",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref016",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.124446"
    },
    {
      "key": "S0883769400016766_ref011",
      "doi-asserted-by": "crossref",
      "unstructured": "11 Ross I.M. U.S. Patent No. 2,791,760 (1957).",
      "DOI": "10.1136/bmj.2.5047.760"
    },
    {
      "key": "S0883769400016766_ref001",
      "first-page": "403",
      "volume-title": "Proc. IEEE Custom Integrated Circuits Conf.",
      "author": "Masui",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref005",
      "first-page": "282",
      "volume-title": "Proc. IEEE Int. Solid-State Circuits Conf.",
      "author": "Shiratake",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref002",
      "volume-title": "Abs. Int. Conf. Solid State Devices and Materials",
      "author": "Takahashi",
      "year": "2004"
    },
    {
      "key": "S0883769400016766_ref004",
      "first-page": "169",
      "volume-title": "Symp. VLSI Technologies Dig. Tech. Papers",
      "author": "Song",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref007",
      "volume-title": "International Technology Roadmap for Semiconductors, 2003 Edition (ITRS)",
      "year": "2003"
    },
    {
      "key": "S0883769400016766_ref009",
      "first-page": "50",
      "volume-title": "Proc. IEEE Int. Solid-State Circuits Conf.",
      "author": "Yamaoka",
      "year": "2004"
    },
    {
      "key": "S0883769400016766_ref017",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/LED.2002.1004214"
    },
    {
      "key": "S0883769400016766_ref018",
      "first-page": "213",
      "volume": "2",
      "author": "Yu",
      "year": "2002",
      "journal-title": "J. Semicond. Tech. Sci."
    },
    {
      "key": "S0883769400016766_ref013",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.38.2285"
    },
    {
      "key": "S0883769400016766_ref010",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/JSSC.2003.810034"
    }
  ],
  "container-title": "MRS Bulletin",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0883769400016766",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T22:06:49Z",
    "timestamp": 1614204409000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/mrs2004.235"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        11
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          2004,
          11
        ]
      ]
    }
  },
  "alternative-id": [
    "S0883769400016766"
  ],
  "URL": "http://dx.doi.org/10.1557/mrs2004.235",
  "relation": {},
  "ISSN": [
    "0883-7694",
    "1938-1425"
  ],
  "subject": [],
  "container-title-short": "MRS Bull.",
  "published": {
    "date-parts": [
      [
        2004,
        11
      ]
    ]
  }
}