DOI: 10.1557/mrs2002.76. Compatibility Challenges for High-<i>ĸ</i> Materials Integration into CMOS Technology

Compatibility Challenges for High-ĸ Materials Integration into CMOS Technology

10.1557/mrs2002.76

Crossref journal-article

Springer Science and Business Media LLC

MRS Bulletin (297)

Abstract

AbstractIn addition to meeting the formidable challenges of replacing the nearly perfect SiO2 dielectric, a new dielectric ideally needs to replace SiO2 with minimal rearrangement of the complementary metal oxide semiconductor (CMOS) process flow. In this article, we outline the essential materials-integration issues that arise out of the technical requirements for minimizing changes to future process technologies. These include interfacial layer formation, film microstructure, deposition technologies, and electrical performance challenges such as trapped charge and the mobility degradation associated with any replacement material. Integration of the high-ĸ materials currently under consideration presents a significant challenge for materials scientists and engineers in industry and academia.

Bibliography

Guha, S., Gusev, E., Copel, M., Ragnarsson, L.-Ã., & Buchanan, D. A. (2002). Compatibility Challenges for High-Ä¸ Materials Integration into CMOS Technology. MRS Bulletin, 27(3), 226â229.

Authors 5

Supratik Guha (first)
Evgeni Gusev (additional)
Matthew Copel (additional)
Lars-Åke Ragnarsson (additional)
Douglas A. Buchanan (additional)

References 23 Referenced 40

10.1063/1.112854
{'key': 'S0883769400020522_ref018', 'first-page': '374', 'volume-title': 'Ionizing Radiation Effects in MOS Devices and Circuits', 'author': 'Dressendorfer', 'year': '1989'} / Ionizing Radiation Effects in MOS Devices and Circuits by Dressendorfer (1989)
{'key': 'S0883769400020522_ref016', 'first-page': '23', 'volume-title': 'IEDM Tech. Dig.', 'author': 'Manchanda', 'year': '2000'} / IEDM Tech. Dig. by Manchanda (2000)
10.1063/1.1382851
10.1063/1.1339994
10.1063/1.1391418
10.1063/1.1316073
10.1063/1.1320464
10.1109/16.954476 / IEEE Trans. Electron Devices by Ma (2001)
10.1063/1.1406989
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10.1063/1.1326482
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10.1109/55.954921
10.1109/16.337449
10.1063/1.1355294
10.1063/1.1405826
10.1063/1.1367902
13. Gribelyuk M.A. , Callegari S. , Gusev E. , Copel M. , and Buchanan D. (unpublished manuscript).
10.1063/1.371888
10.1063/1.1355002
10.1063/1.125694

Dates

Type	When
Created	14 years, 7 months ago (Feb. 2, 2011, 7:56 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:04 p.m.)
Indexed	3 months, 1 week ago (May 21, 2025, 4:48 p.m.)
Issued	23 years, 6 months ago (March 1, 2002)
Published	23 years, 6 months ago (March 1, 2002)
Published Online	14 years, 7 months ago (Jan. 31, 2011)
Published Print	23 years, 6 months ago (March 1, 2002)

Funders 0

None

BibTeX

@article{Guha_2002, title={Compatibility Challenges for High-ĸ Materials Integration into CMOS Technology}, volume={27}, ISSN={1938-1425}, url={http://dx.doi.org/10.1557/mrs2002.76}, DOI={10.1557/mrs2002.76}, number={3}, journal={MRS Bulletin}, publisher={Springer Science and Business Media LLC}, author={Guha, Supratik and Gusev, Evgeni and Copel, Matthew and Ragnarsson, Lars-Åke and Buchanan, Douglas A.}, year={2002}, month=mar, pages={226–229} }

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