Crossref journal-article
Springer Science and Business Media LLC
MRS Communications (297)
Abstract

AbstractThe hybrid halide perovskites combine the low-cost processing characteristics of organic materials with the performance factors of inorganic compounds. Recently the power conversion efficiencies of perovskite photovoltaic solar cells have reached a respective value of ∼20%. The charge transport properties were indirectly approximated in these compounds because of lack of available field-effect transistors (FETs). Here we report the fabrication and room-temperature operation of FETs based on the hybrid perovskites. We obtained balanced electron and hole transport with mobilities of ∼1 cm2/Vs. We also found that the yield, as well as the operational and environmental stability of the fabricated transistors is limited.

Bibliography

Mei, Y., Zhang, C., Vardeny, Z. V., & Jurchescu, O. D. (2015). Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature. MRS Communications, 5(2), 297–301.

Authors 4
  1. Y. Mei (first)
  2. C. Zhang (additional)
  3. Z. V. Vardeny (additional)
  4. O. D. Jurchescu (additional)
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Dates
Type When
Created 10 years, 3 months ago (May 4, 2015, 3:25 a.m.)
Deposited 4 years, 6 months ago (Feb. 14, 2021, 5:47 a.m.)
Indexed 3 weeks ago (Aug. 5, 2025, 8:35 a.m.)
Issued 10 years, 2 months ago (June 1, 2015)
Published 10 years, 2 months ago (June 1, 2015)
Published Online 10 years, 2 months ago (June 1, 2015)
Published Print 10 years, 2 months ago (June 1, 2015)
Funders 0

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@article{Mei_2015, title={Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature}, volume={5}, ISSN={2159-6867}, url={http://dx.doi.org/10.1557/mrc.2015.21}, DOI={10.1557/mrc.2015.21}, number={2}, journal={MRS Communications}, publisher={Springer Science and Business Media LLC}, author={Mei, Y. and Zhang, C. and Vardeny, Z. V. and Jurchescu, O. D.}, year={2015}, month=jun, pages={297–301} }