DOI: 10.1557/jmr.2013.72. Defects in amorphous phase-change materials

Defects in amorphous phase-change materials

10.1557/jmr.2013.72

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

Bibliography

Luckas, J., Krebs, D., Grothe, S., KlomfaÃ, J., Carius, R., Longeaud, C., & Wuttig, M. (2013). Defects in amorphous phase-change materials. Journal of Materials Research, 28(9), 1139â1147.

Authors 7

Jennifer Luckas (first)
Daniel Krebs (additional)
Stephanie Grothe (additional)
Josef Klomfaß (additional)
Reinhard Carius (additional)
Christophe Longeaud (additional)
Matthias Wuttig (additional)

References 41 Referenced 42

10.1007/s10854-007-9549-1
10.1103/PhysRevB.4.502
10.1038/nmat1359
10.1088/0953-8984/17/32/L01
10.1063/1.4769871
10.1063/1.328619
10.1103/PhysRevLett.22.1065
27. Kremers S. : Optische Eigenschaften von Phasenwechselmaterialien für zukünftige optische und elektronische Speicheranwendungen. Ph.D. Thesis, RWTH University, Aachen, Germany, 2009.
10.1063/1.328036
10.1103/PhysRevLett.57.1777
10.1063/1.3674311
10.1063/1.2931951
10.1080/13642819008205532
10.1103/PhysRevB.45.11672
10.1063/1.3109063
10.1063/1.3210792
10.1038/nmat1350
10.1063/1.1884248
10.1063/1.97617
10.1002/pssc.200982694 / Phys. Status Solidi C / Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5 by Luckas (2010)
10.1002/adma.201004255
10.1109/TED.2004.825805
10.1063/1.2825650
10.1038/nmat2009
10.1063/1.373041
10.1063/1.3191670
10.1103/PhysRevLett.21.1450
10.1088/0953-8984/21/4/045508
{'key': 'S0884291413000721_ref8', 'first-page': '054308', 'article-title': 'Characterization of phase change memory materials using phase change bridge devices', 'volume': '106', 'author': 'Krebs', 'year': '2009', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. / Characterization of phase change memory materials using phase change bridge devices by Krebs (2009)
10.1063/1.2773688
10.1063/1.2930680
10.1016/j.jnoncrysol.2011.12.112
10.1364/AO.20.001333
10.1103/RevModPhys.82.1539
10.1063/1.3605517
10.1038/nmat2226
{'key': 'S0884291413000721_ref24', 'article-title': 'Influence of dopants on the crystallization temperature, crystal structure, resistance, and threshold field for Ge2Sb2Te5 and GeTe phase change materials', 'author': 'Raoux', 'year': '2011', 'journal-title': 'E/PCOS'} / E/PCOS / Influence of dopants on the crystallization temperature, crystal structure, resistance, and threshold field for Ge2Sb2Te5 and GeTe phase change materials by Raoux (2011)
10.1103/PhysRev.87.835
10.1103/PhysRevLett.37.1504
10.1016/0022-3093(70)90015-3
10.1103/PhysRevB.81.081204

Dates

Type	When
Created	12 years, 3 months ago (May 9, 2013, 6:38 a.m.)
Deposited	2 years, 2 months ago (July 1, 2023, 12:16 p.m.)
Indexed	2 months ago (July 2, 2025, 3:30 p.m.)
Issued	12 years, 3 months ago (May 9, 2013)
Published	12 years, 3 months ago (May 9, 2013)
Published Online	12 years, 3 months ago (May 9, 2013)
Published Print	12 years, 3 months ago (May 14, 2013)

Funders 0

None

BibTeX

@article{Luckas_2013, title={Defects in amorphous phase-change materials}, volume={28}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2013.72}, DOI={10.1557/jmr.2013.72}, number={9}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Luckas, Jennifer and Krebs, Daniel and Grothe, Stephanie and Klomfaß, Josef and Carius, Reinhard and Longeaud, Christophe and Wuttig, Matthias}, year={2013}, month=may, pages={1139–1147} }

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