DOI: 10.1557/jmr.2006.0341. Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

10.1557/jmr.2006.0341

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.

Bibliography

Chen, C., Plante, M. C., Fradin, C., & LaPierre, R. R. (2006). Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures. Journal of Materials Research, 21(11), 2801â2809.

Authors 4

C. Chen (first)
M.C. Plante (additional)
C. Fradin (additional)
R.R. LaPierre (additional)

References 36 Referenced 43

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Dates

Type	When
Created	18 years, 9 months ago (Nov. 1, 2006, 6:15 p.m.)
Deposited	4 years, 5 months ago (Feb. 24, 2021, 3:23 p.m.)
Indexed	1 year, 11 months ago (Sept. 11, 2023, 7:32 p.m.)
Issued	18 years, 9 months ago (Nov. 1, 2006)
Published	18 years, 9 months ago (Nov. 1, 2006)
Published Online	14 years, 5 months ago (March 3, 2011)
Published Print	18 years, 9 months ago (Nov. 1, 2006)

Funders 0

None

BibTeX

@article{Chen_2006, title={Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures}, volume={21}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2006.0341}, DOI={10.1557/jmr.2006.0341}, number={11}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Chen, C. and Plante, M.C. and Fradin, C. and LaPierre, R.R.}, year={2006}, month=nov, pages={2801–2809} }

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