DOI: 10.1557/jmr.2004.19.2.423. Synthesis and characterization of single-crystal indium nitride nanowires

Synthesis and characterization of single-crystal indium nitride nanowires

10.1557/jmr.2004.19.2.423

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 μm/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.

Authors 10

Tao Tang (first)
Song Han (additional)
Wu Jin (additional)
Xiaolei Liu (additional)
Chao Li (additional)
Daihua Zhang (additional)
Chongwu Zhou (additional)
Bin Chen (additional)
Jie Han (additional)
M. Meyyapan (additional)

References 13 Referenced 85

10.1557/JMR.2003.0033
10.1021/ja002008e
10.1063/1.1490636
{'key': 'S0884291400086271_ref009', 'first-page': '49', 'volume-title': 'Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe,', 'author': 'Zubrilov', 'year': '2001'} / Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, by Zubrilov (2001)
10.1116/1.585897
10.1063/1.1562331
10.1016/S0921-4526(02)00569-0
10.1039/b111270h
10.1021/cm950108r
10.1063/1.126273
10.1021/nl015667d
10.1063/1.1450255
10.1063/1.366641

Dates

Type	When
Created	19 years, 10 months ago (Oct. 19, 2005, 12:54 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:17 p.m.)
Indexed	1 year, 10 months ago (Oct. 8, 2023, 10:09 a.m.)
Issued	21 years, 6 months ago (Feb. 1, 2004)
Published	21 years, 6 months ago (Feb. 1, 2004)
Published Online	14 years, 5 months ago (March 3, 2011)
Published Print	21 years, 6 months ago (Feb. 1, 2004)

Funders 0

None

BibTeX

@article{Tang_2004, title={Synthesis and characterization of single-crystal indium nitride nanowires}, volume={19}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2004.19.2.423}, DOI={10.1557/jmr.2004.19.2.423}, number={2}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Tang, Tao and Han, Song and Jin, Wu and Liu, Xiaolei and Li, Chao and Zhang, Daihua and Zhou, Chongwu and Chen, Bin and Han, Jie and Meyyapan, M.}, year={2004}, month=feb, pages={423–426} }

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