DOI: 10.1557/s1092578300001708. GaN based LED's with different recombination zones

GaN based LED's with different recombination zones

10.1557/s1092578300001708

Crossref journal-article

Springer Science and Business Media LLC

MRS Internet Journal of Nitride Semiconductor Research (297)

Abstract

GaN based homo- and heterotype LED's have been fabricated and characterized which emit in the blue and ultra-violet part of the spectral range. Complete epitaxial LED layer sequences with different recombination zones have been grown using MOVPE as well as MBE. Subsequent to the material growth, chemically-assisted ion-beam etching and contact metallization are utilized to achieve full LED devices. MBE-grown homotype LED's reveal a peak in the output light spectrum at a wavelength of 372 nm with a linewidth being as narrow as 12 nm. GaN/InGaN LED's grown by MOVPE show visible single peak emission with linewidths of 23 nm. The optical output power as measured in a calibrated Ulbricht sphere is in the 1 μW regime.

Bibliography

Schauler, M., Kirchner, C., Mayer, M., Pelzmann, A., Eberhard, F., Kamp, M., Unger, P., & Ebeling, K. J. (1997). GaN based LEDâs with different recombination zones. MRS Internet Journal of Nitride Semiconductor Research, 2.

Authors 8

M. Schauler (first)
C. Kirchner (additional)
M. Mayer (additional)
A. Pelzmann (additional)
F. Eberhard (additional)
Markus Kamp (additional)
P. Unger (additional)
K. J. Ebeling (additional)

References 5 Referenced 13

Dates

Type	When
Created	9 years ago (Aug. 8, 2016, 2:28 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:07 a.m.)
Issued	28 years, 8 months ago (Jan. 1, 1997)
Published	28 years, 8 months ago (Jan. 1, 1997)
Published Online	11 years, 2 months ago (June 13, 2014)
Published Print	28 years, 8 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{Schauler_1997, title={GaN based LED’s with different recombination zones}, volume={2}, ISSN={1092-5783}, url={http://dx.doi.org/10.1557/s1092578300001708}, DOI={10.1557/s1092578300001708}, journal={MRS Internet Journal of Nitride Semiconductor Research}, publisher={Springer Science and Business Media LLC}, author={Schauler, M. and Kirchner, C. and Mayer, M. and Pelzmann, A. and Eberhard, F. and Kamp, Markus and Unger, P. and Ebeling, K. J.}, year={1997} }

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