DOI: 10.1557/s109257830000065x. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

10.1557/s109257830000065x

Crossref journal-article

Springer Science and Business Media LLC

MRS Internet Journal of Nitride Semiconductor Research (297)

Abstract

A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.

Bibliography

Brown, J. D., Yu, Z., Matthews, J., Harney, S., Boney, J., Schetzina, J. F., Benson, J. D., Dang, K. W., Terrill, C., Nohava, T., Yang, W., & Krishnankutty, S. (1999). Visible-Blind UV Digital Camera Based On a 32 Ã 32 Array of GaN/AlGaN p-i-n Photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 4(1).

Authors 12

J.D. Brown (first)
Zhonghai Yu (additional)
J. Matthews (additional)
S. Harney (additional)
J. Boney (additional)
J.F. Schetzina (additional)
J.D. Benson (additional)
K.W. Dang (additional)
C. Terrill (additional)
Thomas Nohava (additional)
Wei Yang (additional)
Subash Krishnankutty (additional)

References 20 Referenced 39

{'key': 'S109257830000065X_b19', 'first-page': 'G4', 'volume': '4S1', 'author': 'Yu', 'year': '1999', 'journal-title': 'MRS Internet J. Nitride Semicond. Res'} / MRS Internet J. Nitride Semicond. Res by Yu (1999)
10.1049/el:19971025
{'key': 'S109257830000065X_b11', 'first-page': '217', 'article-title': 'Development of Gallium Nitride Photoconductive Detectors', 'volume': '18', 'author': 'Wickenden', 'year': '1997', 'journal-title': 'Johns Hopkins APL Technical Digest'} / Johns Hopkins APL Technical Digest / Development of Gallium Nitride Photoconductive Detectors by Wickenden (1997)
10.1049/el:19960743
{'key': 'S109257830000065X_b13', 'first-page': '26', 'volume': '51', 'author': 'Morkoc', 'year': '1999', 'journal-title': 'Nav. Res. Rev.'} / Nav. Res. Rev. by Morkoc (1999)
10.1063/1.118593
[15] The Book of Photon Tools , p. 1-25, distributed by Oriel Corporation, available through theWorld Wide Web at http://www.oriel.com. “This is a well-known source catalog for optical components.”
10.1557/S1092578300001678
10.1063/1.120688
{'key': 'S109257830000065X_b5', 'volume-title': 'The Blue Laser Diode - GaN based Light Emitters and Lasers', 'author': 'Nakamura', 'year': '1997'} / The Blue Laser Diode - GaN based Light Emitters and Lasers by Nakamura (1997)
{'key': 'S109257830000065X_b14', 'volume-title': 'Physics of Optoelectronic Devices', 'author': 'Chuang', 'year': '1995'} / Physics of Optoelectronic Devices by Chuang (1995)
{'key': 'S109257830000065X_b18', 'first-page': 'G3', 'volume': '4S1', 'author': 'Zheleva', 'year': '1999', 'journal-title': 'MRS Internet J. Nitride Semicond. Res'} / MRS Internet J. Nitride Semicond. Res by Zheleva (1999)
10.1063/1.120164
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{'key': 'S109257830000065X_b6', 'first-page': '991', 'volume': '142', 'author': 'Edmond', 'year': '1996', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. by Edmond (1996)
{'key': 'S109257830000065X_b20', 'first-page': '26', 'volume': '51', 'author': 'Linthicum', 'year': '1999', 'journal-title': 'Nav. Res. Rev.'} / Nav. Res. Rev. by Linthicum (1999)
{'key': 'S109257830000065X_b16', 'first-page': 'G5', 'volume': '4S1', 'author': 'Johnson', 'year': '1999', 'journal-title': 'MRS Internet J. Nitride Semicond. Res'} / MRS Internet J. Nitride Semicond. Res by Johnson (1999)
10.1063/1.122092
10.1063/1.114359
10.1557/S0883769400032577

Dates

Type	When
Created	9 years ago (Aug. 8, 2016, 2:28 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:03 p.m.)
Indexed	4 months, 1 week ago (April 21, 2025, 12:26 a.m.)
Issued	26 years, 8 months ago (Jan. 1, 1999)
Published	26 years, 8 months ago (Jan. 1, 1999)
Published Online	11 years, 2 months ago (June 13, 2014)
Published Print	26 years, 8 months ago (Jan. 1, 1999)

Funders 0

None

BibTeX

@article{Brown_1999, title={Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes}, volume={4}, ISSN={1092-5783}, url={http://dx.doi.org/10.1557/s109257830000065x}, DOI={10.1557/s109257830000065x}, number={1}, journal={MRS Internet Journal of Nitride Semiconductor Research}, publisher={Springer Science and Business Media LLC}, author={Brown, J.D. and Yu, Zhonghai and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J.F. and Benson, J.D. and Dang, K.W. and Terrill, C. and Nohava, Thomas and Yang, Wei and Krishnankutty, Subash}, year={1999} }

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