DOI: 10.1557/s0883769400046042. Sputter Synthesis of Ferroelectric Films and Heterostructures

Sputter Synthesis of Ferroelectric Films and Heterostructures

10.1557/s0883769400046042

Crossref journal-article

Springer Science and Business Media LLC

MRS Bulletin (297)

Abstract

Ferroelectric films can display a wide range of dielectric, ferroelectric, piezoelectric, electrostrictive, and pyroelectric properties. The potential utilization of these properties in a new generation of devices has driven the intensive studies on the synthesis, characterization, and determination of processing-microstructure-property relationships of ferroelectric thin films during the last five years. In addition there has been an increased drive for integrating ferroelectric film-based heterostructures with different substrate materials to demonstrate numerous devices that exploit the dielectric, ferroelectric, piezoelectric, electrostrictive, and pyroelectric properties of these materials. For example the high dielectric permittivities of perovskite-type materials can be advantageously used in dynamic random-access memories (DRAMs), while the large values of switchable remanent polarization of ferroelectric materials are suitable for nonvolatile ferroelectric random-access memories (NVFRAMs).Various vapor-phase deposition techniques such as plasma and ion-beam sputter deposition (PSD and IBSD, respectively), pulsed laser-ablation deposition (PLAD), electron-beam or oven-induced evaporation for molecular-beam epitaxy (MBE), and chemical vapor deposition (CVD) have been applied to produce ferroelectric films and layered heterostructures. See References 4–7 for recent reviews. However, work is still necessary to optimize the techniques to produce device-quality films on large semiconductor substrates in a way that is fully compatible with existing semiconductor process technology. Therefore research efforts should be focused on the optimization of suitable process methods and on the investigation of processing-composition-microstructure property relationships. These efforts are the focus of this article with emphasis on PSD and IBSD techniques.

Bibliography

Auciello, O., Kingon, A. I., & Krupanidhi, S. B. (1996). Sputter Synthesis of Ferroelectric Films and Heterostructures. MRS Bulletin, 21(6), 25â30.

Authors 3

O. Auciello (first)
A.I. Kingon (additional)
S.B. Krupanidhi (additional)

References 28 Referenced 37

{'key': 'S0883769400046042_ref013', 'first-page': '106', 'volume-title': 'American Institute of Physics Conf. Proc.', 'volume': '165', 'author': 'Rossnagel', 'year': '1988'} / American Institute of Physics Conf. Proc. by Rossnagel (1988)
Ramtron Corp. (USA) has produced PZT-based nonvolatile ferroelectric memories on a small scale using PSD.
{'key': 'S0883769400046042_ref006', 'volume-title': 'Ferroelectric Thin Films: Synthesis and Basic Properties', 'author': 'Auciello', 'year': '1996'} / Ferroelectric Thin Films: Synthesis and Basic Properties by Auciello (1996)
10.1016/0040-6090(89)90653-6
10.1063/1.337654
10.1063/1.330456
{'key': 'S0883769400046042_ref011', 'first-page': '339', 'volume': '21', 'author': 'Ishida', 'year': '1978', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. by Ishida (1978)
{'key': 'S0883769400046042_ref004', 'volume': 'XVII', 'author': 'Hubler', 'year': '1992', 'journal-title': 'MRS Bulletin'} / MRS Bulletin by Hubler (1992)
10.1007/978-94-017-2950-5
{'key': 'S0883769400046042_ref014', 'first-page': '77', 'volume-title': 'Ferroelectric Thin Films I', 'volume': '200', 'author': 'Roy', 'year': '1990'} / Ferroelectric Thin Films I by Roy (1990)
{'key': 'S0883769400046042_ref002', 'volume-title': 'Ferroelectric Thin Films I', 'volume': '200', 'author': 'Myers', 'year': '1990'} / Ferroelectric Thin Films I by Myers (1990)
{'key': 'S0883769400046042_ref001', 'volume-title': 'Proc. 3rd–5th Int. Symp. Integrated Ferroelectrics', 'author': 'de Araujo', 'year': '1993'} / Proc. 3rd–5th Int. Symp. Integrated Ferroelectrics by de Araujo (1993)
{'key': 'S0883769400046042_ref016', 'first-page': '107', 'volume-title': 'Materials Modification by Energetic Atoms and Ions', 'volume': '268', 'author': 'Krauss', 'year': '1992'} / Materials Modification by Energetic Atoms and Ions by Krauss (1992)
10.1080/10584589308216687
10.1063/1.355086
10.1063/1.350719
10.1063/1.337423
10.1557/S0883769400046066
{'key': 'S0883769400046042_ref019', 'volume-title': 'Handbook of Ion Beam Processing Technology', 'author': 'Cuomo', 'year': '1989'} / Handbook of Ion Beam Processing Technology by Cuomo (1989)
Krauss A.R. and Auciello O. , U.S. Patent No. 4,923,585 (1990).
{'key': 'S0883769400046042_ref021', 'volume-title': 'Ferroelectric Thin Films: Synthesis and Basic Properties', 'author': 'Auciello', 'year': '1996'} / Ferroelectric Thin Films: Synthesis and Basic Properties by Auciello (1996)
10.1063/1.349822
10.1080/10584589508019380
10.1063/1.335661
{'key': 'S0883769400046042_ref005', 'volume-title': 'Ferroelectric Thin Films: Synthesis and Basic Properties', 'author': 'Auciello', 'year': '1996'} / Ferroelectric Thin Films: Synthesis and Basic Properties by Auciello (1996)
10.1063/1.360622
10.1116/1.578041
10.1143/JJAP.32.4057

Dates

Type	When
Created	9 years ago (Aug. 8, 2016, 5:35 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:25 p.m.)
Indexed	1 month, 1 week ago (July 20, 2025, 6:44 p.m.)
Issued	29 years, 2 months ago (June 1, 1996)
Published	29 years, 2 months ago (June 1, 1996)
Published Online	11 years, 9 months ago (Nov. 29, 2013)
Published Print	29 years, 2 months ago (June 1, 1996)

Funders 0

None

BibTeX

@article{Auciello_1996, title={Sputter Synthesis of Ferroelectric Films and Heterostructures}, volume={21}, ISSN={1938-1425}, url={http://dx.doi.org/10.1557/s0883769400046042}, DOI={10.1557/s0883769400046042}, number={6}, journal={MRS Bulletin}, publisher={Springer Science and Business Media LLC}, author={Auciello, O. and Kingon, A.I. and Krupanidhi, S.B.}, year={1996}, month=jun, pages={25–30} }

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