DOI: 10.1557/proc-97-195. Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

10.1557/proc-97-195

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Bibliography

Pensl, G., Helbig, R., Zhang, H., Ziegler, G., & Lanig, P. (1987). Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes. MRS Proceedings, 97.

Authors 5

Gerhard Pensl (first)
Reinhard Helbig (additional)
Hong Zhang (additional)
Gonther Ziegler (additional)
Peter Lanig (additional)

References 11 Referenced 9

{'key': 'S194642740047243X_ref002', 'first-page': '1372', 'volume': '12', 'author': 'Kalinina', 'year': '1978', 'journal-title': 'Sov.Phys. Semicond.'} / Sov.Phys. Semicond. by Kalinina (1978)
{'key': 'S194642740047243X_ref011', 'first-page': '851', 'volume': '16', 'author': 'Sankin', 'year': '1982', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. by Sankin (1982)
10.1007/BF00616575
{'key': 'S194642740047243X_ref003', 'first-page': '352', 'volume': '52', 'author': 'Edmond', 'year': '1986', 'journal-title': 'Mat.Res.Soc.Symp.Proc.'} / Mat.Res.Soc.Symp.Proc. by Edmond (1986)
9. Pettenpaul E. , Ph.D.thesis 1977, Tec-nische Universität Hannover.
10.1063/1.330041
10.1016/0038-1101(67)90122-0
6. Zhang H. , Pensl G. , Helbig R. , Ziegler G. , Lanig P. to be published.
10.1007/BF00615808
{'key': 'S194642740047243X_ref010', 'first-page': '366', 'volume-title': 'Proc.Conf. on SiC', 'author': 'Philipp', 'year': '1960'} / Proc.Conf. on SiC by Philipp (1960)
{'key': 'S194642740047243X_ref001', 'first-page': '471', 'volume-title': 'Proc.Third Int.Conf. on SiC', 'author': 'Marsh', 'year': '1974'} / Proc.Third Int.Conf. on SiC by Marsh (1974)

Dates

Type	When
Created	14 years, 6 months ago (March 5, 2011, 7:48 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 2:58 p.m.)
Indexed	1 year, 7 months ago (Feb. 3, 2024, 9:48 a.m.)
Issued	38 years, 8 months ago (Jan. 1, 1987)
Published	38 years, 8 months ago (Jan. 1, 1987)
Published Online	14 years, 6 months ago (Feb. 25, 2011)
Published Print	38 years, 8 months ago (Jan. 1, 1987)

Funders 0

None

BibTeX

@article{Pensl_1987, title={Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes}, volume={97}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-97-195}, DOI={10.1557/proc-97-195}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Pensl, Gerhard and Helbig, Reinhard and Zhang, Hong and Ziegler, Gonther and Lanig, Peter}, year={1987} }

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