Abstract
AbstractWe report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.
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Dates
Type | When |
---|---|
Created | 12 years, 8 months ago (Dec. 5, 2012, 5:15 p.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 2:55 p.m.) |
Indexed | 4 months, 1 week ago (April 17, 2025, 1:50 a.m.) |
Issued | 22 years, 7 months ago (Jan. 1, 2003) |
Published | 22 years, 7 months ago (Jan. 1, 2003) |
Published Online | 14 years, 6 months ago (Feb. 15, 2011) |
Published Print | 22 years, 7 months ago (Jan. 1, 2003) |
@article{Kelley_2003, title={High Performance Organic Thin Film Transistors}, volume={771}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-771-l6.5}, DOI={10.1557/proc-771-l6.5}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Kelley, Tommie W. and Muyres, Dawn V. and Baude, Paul F. and Smith, Terry P. and Jones, Todd D.}, year={2003} }