Abstract
ABSTRACTZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.
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Dates
Type | When |
---|---|
Created | 14 years, 4 months ago (April 5, 2011, 11:31 p.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 4:24 p.m.) |
Indexed | 2 years, 4 months ago (April 13, 2023, 4:24 p.m.) |
Issued | 24 years, 7 months ago (Jan. 1, 2001) |
Published | 24 years, 7 months ago (Jan. 1, 2001) |
Published Online | 14 years, 5 months ago (March 21, 2011) |
Published Print | 24 years, 7 months ago (Jan. 1, 2001) |
@article{Hunger_2001, title={Observation of Interdiffusion in ZnO/CuInSe2 Heterostructures and its Effect on Film Properties}, volume={668}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-668-h8.21}, DOI={10.1557/proc-668-h8.21}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Hunger, Ralf and Fons, Paul and Iwata, Kakuya and Yamada, Akimasa and Matsubara, Koji and Niki, Shigeru and Nakahara, Ken and Takasu, Hidemi}, year={2001} }