Crossref journal-article
Springer Science and Business Media LLC
MRS Proceedings (297)
Abstract

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Bibliography

Gibson, J. M., Cheng, J.-Y., Voyles, P., TREACY, M. M. J., & Jacobson, D. C. (1998). The Structure of Ion-Implanted Amorphous Silicon. MRS Proceedings, 540.

Authors 5
  1. J. M. Gibson (first)
  2. J-Y. Cheng (additional)
  3. P. Voyles (additional)
  4. M.M.J. TREACY (additional)
  5. D.C. Jacobson (additional)
Dates
Type When
Created 14 years, 4 months ago (April 5, 2011, 3:27 p.m.)
Deposited 4 years, 6 months ago (Feb. 24, 2021, 4:39 p.m.)
Indexed 1 year, 6 months ago (Feb. 6, 2024, 11:03 p.m.)
Issued 27 years, 8 months ago (Jan. 1, 1998)
Published 27 years, 8 months ago (Jan. 1, 1998)
Published Online 14 years, 6 months ago (Feb. 15, 2011)
Published Print 27 years, 8 months ago (Jan. 1, 1998)
Funders 0

None

@article{Gibson_1998, title={The Structure of Ion-Implanted Amorphous Silicon}, volume={540}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-540-27}, DOI={10.1557/proc-540-27}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Gibson, J. M. and Cheng, J-Y. and Voyles, P. and TREACY, M.M.J. and Jacobson, D.C.}, year={1998} }