Abstract
AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.
References
7
Referenced
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/ Acta Crystallogr. by Treacy (1996)
Dates
Type | When |
---|---|
Created | 14 years, 4 months ago (April 5, 2011, 3:27 p.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:39 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 6, 2024, 11:03 p.m.) |
Issued | 27 years, 8 months ago (Jan. 1, 1998) |
Published | 27 years, 8 months ago (Jan. 1, 1998) |
Published Online | 14 years, 6 months ago (Feb. 15, 2011) |
Published Print | 27 years, 8 months ago (Jan. 1, 1998) |
@article{Gibson_1998, title={The Structure of Ion-Implanted Amorphous Silicon}, volume={540}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-540-27}, DOI={10.1557/proc-540-27}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Gibson, J. M. and Cheng, J-Y. and Voyles, P. and TREACY, M.M.J. and Jacobson, D.C.}, year={1998} }