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MRS Proceedings (297)
Abstract

ABSTRACTDiffusion of the Al-substituting elements Ga, Ge, Ti and Nb has been investigated in Ni3Al single crystals by the secondary ion mass spectrometry (SIMS). A model for the minority component diffusion by anti-structure defects has been suggested for the Ll2 structure. It involves both nearest neighbor jumps of the solute atoms on the Ni sublattice as anti-structure atoms and the formation of so-called anti-structure bridges which correspond to jumps between different sublattices. The model under consideration was shown to agree with the experimental data on the Al-substituting solute diffusion (X = Ga, Ge, Ti, Nb) in Ni3Al and it allows to explain also the observed ratio of the diffusivities DNi/DX, which may be higher and/or lower than unity in dependence on the solute and temperature.

Bibliography

Frank, St., Divinski, S., & Herzig, Chr. (1998). Mechanisms of Al Self- and Al-Substituting Solute Diffusion in Ni3Al. MRS Proceedings, 527.

Authors 3
  1. St. Frank (first)
  2. S. Divinski (additional)
  3. Chr. Herzig (additional)
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Dates
Type When
Created 14 years, 5 months ago (April 5, 2011, 7:22 a.m.)
Deposited 4 years, 6 months ago (Feb. 24, 2021, 4:33 p.m.)
Indexed 3 years, 5 months ago (March 31, 2022, 1:47 p.m.)
Issued 27 years, 8 months ago (Jan. 1, 1998)
Published 27 years, 8 months ago (Jan. 1, 1998)
Published Online 14 years, 6 months ago (Feb. 10, 2011)
Published Print 27 years, 8 months ago (Jan. 1, 1998)
Funders 0

None

@article{Frank_1998, title={Mechanisms of Al Self- and Al-Substituting Solute Diffusion in Ni3Al}, volume={527}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-527-171}, DOI={10.1557/proc-527-171}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Frank, St. and Divinski, S. and Herzig, Chr.}, year={1998} }