DOI: 10.1557/proc-518-209. Residual Stress of Silicon Films Deposited by Lpcvd From Silane

Residual Stress of Silicon Films Deposited by Lpcvd From Silane

10.1557/proc-518-209

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

AbstractIn this paper, amorphous, semi-crystalline and polycrystalline silicon films have been deposited by low pressure chemical vapour deposition (LPCVD) from silane SiH4 by ranging the deposition temperature from 555 to 635°C and the total pressure from 100 to 300 millitorrs. Films residual stresses have been determined thanks to the formula of Stoney by measurements of the wafer curvature before and after removal of the back side deposition. The influences of the different deposition parameters are reported and major stress variations are evidenced. By studying the effects of a 600°C crystallisation anneal and by comparing them to those observed for amorphous silicon films deposited from disilane Si2H6, compressive and tensile stresses are respectively related to “surface” and “volume” crystallisation phenomena. The different stress values of amorphous and polycrystalline silicon have been estimated and, according to these results, solutions are finally proposed in order to have a real control of residual stress into silicon depositions and to obtain low stress (σ ≈ 0) polysilicon films.

Bibliography

Temple-Boyer, P., Imbernon, E., Rousset, B., & Scheid, E. (1998). Residual Stress of Silicon Films Deposited by Lpcvd From Silane. MRS Proceedings, 518.

Authors 4

P. Temple-Boyer (first)
E. Imbernon (additional)
B. Rousset (additional)
E. Scheid (additional)

References 10 Referenced 8

Dates

Type	When
Created	14 years, 4 months ago (April 5, 2011, 1:15 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:30 p.m.)
Indexed	1 month, 4 weeks ago (June 25, 2025, 3:47 p.m.)
Issued	27 years, 7 months ago (Jan. 1, 1998)
Published	27 years, 7 months ago (Jan. 1, 1998)
Published Online	14 years, 6 months ago (Feb. 10, 2011)
Published Print	27 years, 7 months ago (Jan. 1, 1998)

Funders 0

None

BibTeX

@article{Temple_Boyer_1998, title={Residual Stress of Silicon Films Deposited by Lpcvd From Silane}, volume={518}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-518-209}, DOI={10.1557/proc-518-209}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Temple-Boyer, P. and Imbernon, E. and Rousset, B. and Scheid, E.}, year={1998} }

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