DOI: 10.1557/proc-51-349. The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon

The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon

10.1557/proc-51-349

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTThe amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e-) and/or ion irradiated silicon (Si). The irradiations were performed in i n the Argonne High Voltage Microscope-Tandem Facility The irradia ion of Si, at <10 K, with 1-MeV e- to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10 K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of ≈0.37 dpa. Alternatively a dual irradiation, at 10 K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa -- where the ratio of the displacement rates for e- to ions was ≈0.5--resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of radiation damage and the mobilities of point defects.

Bibliography

Seidman, D. N., Averback, R. S., Okamoto, P. R., & Baily, A. C. (1985). The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon. MRS Proceedings, 51.

Authors 4

D.N. Seidman (first)
R.S. Averback (additional)
P.R. Okamoto (additional)
A.C. Baily (additional)

References 21 Referenced 4

10.1109/PROC.1972.8854
{'key': 'S1946427400532400_ref016', 'first-page': '233', 'volume': '23', 'author': 'Föll', 'year': '1975', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. by Föll (1975)
10.1080/00337577808233177
{'key': 'S1946427400532400_ref013', 'first-page': '1', 'volume-title': 'Solid State Physics:Suppl.7', 'author': 'Corbett', 'year': '1966'} / Solid State Physics:Suppl.7 by Corbett (1966)
10.1016/0001-6160(71)90071-X
10.1557/PROC-41-241
2. Morehead F. F. Jr and Crowder B.L. , Radiat. Effects 127 (1970).
10.1016/0022-3115(83)90145-9
10.1080/00337577708237451
10.1016/0375-9601(72)90523-3
10.1080/00337576908235576
10.1080/00337577108231012
10.1080/00337577108231056
10.1080/00337577608240825
10.1080/10420157908201732
10.1080/00337578008210028
10.1080/00337578108244199
10.1016/0029-554X(81)90717-5
10.1119/1.1934201
{'key': 'S1946427400532400_ref017', 'first-page': '11', 'volume': 'NS–18', 'author': 'Corbett', 'year': '1971', 'journal-title': 'Trans. IEEE'} / Trans. IEEE by Corbett (1971)
10.1063/1.90639

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 7:32 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:28 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 7:33 a.m.)
Issued	40 years, 7 months ago (Jan. 1, 1985)
Published	40 years, 7 months ago (Jan. 1, 1985)
Published Online	14 years, 6 months ago (Feb. 26, 2011)
Published Print	40 years, 7 months ago (Jan. 1, 1985)

Funders 0

None

BibTeX

@article{Seidman_1985, title={The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon}, volume={51}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-51-349}, DOI={10.1557/proc-51-349}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Seidman, D.N. and Averback, R.S. and Okamoto, P.R. and Baily, A.C.}, year={1985} }

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