DOI: 10.1557/proc-482-369. Atomic Scale Aluminum and Strain Distribution in a Gan/Al<sub>x</sub>Ga<sub>1−X</sub>N Heterostructure

Atomic Scale Aluminum and Strain Distribution in a Gan/AlxGa1−XN Heterostructure

10.1557/proc-482-369

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

AbstractA GaN/AlxGalxN multi-quantum well test structure with Al concentrations 0 ≤ xAl ≤ 1 was utilized to investigate the growth of AlxGal–xN barrier layers deposited by metal organic chemical vapor deposition (MOCVD). A transition from a two dimensional (2D) to a three dimensional (3D) growth mode was observed in AlxGa1–xN barriers with XAl ≥ 0.75. It is argued that the transition occurs because of growth at temperatures that are low compared with the materials melting points Tmelt. The resulting rough AlxGa1–xN surfaces can be planarized by overgrowth with GaN. Quantitative high resolution electron microscopy (HREM) was applied to measure composition and strain profiles across the GaN/AlxGa1−xN stacks at an atomic level. The measurements reveal a substantial variation of lattice constants at the AlxGa1−xN/GaN interfaces that is attributed to an Al accumulation.

Bibliography

Kisielowski, C., Schmidt, O., & Yang, J. (1997). Atomic Scale Aluminum and Strain Distribution in a Gan/AlxGa1âXN Heterostructure. MRS Proceedings, 482.

Authors 3

Christian Kisielowski (first)
Olaf Schmidt (additional)
Jinwei Yang (additional)

References 12 Referenced 20

10.1103/PhysRevLett.71.4150
1) McDermott B. , Pittman R. , Gertner E. R. , Krueger J. , Kisielowski C. , Liliental-Weber Z. , Weber E. R. , These proceedings
3) Kim Y. , Klockenbrink R. , Kisielowski C. , Krueger J. , Corlatan D. , Sudhir G. S. , Peyrot Y. , Cho Y. , Rubin M. D. , R.WEber E. , These proceedings
4) Sudhir G. S. , Peyrot Y. , Krueger J. , Kim Y. , Klockenbrink R. , Kisielowski C. , D.Rubin M. , Weber E. R. , Kriegseis W. , Meyer B. D. , These proceedings
10.1103/PhysRevB.54.17745
7) Kisielowski C. , Schmidt O. , Luysberg M. , Liliental-Weber Z. , to be published
10.1143/JJAP.36.6932 / Jpn. J. Appl. Phys. by Kisielowski (1997)
9) Yang J. , private communication
2) Krueger J. , Sudhir G. S. , Corlatan D. , Cho Y. , Kim Y. , Klockenbrink R. , Ruvimov S. , Liliental-Weber Z. , Kisielowski C. , Rubin M. , R.Weber E. , McDermott B. , Pittmann R. , Gertner E. R. , These proceedings
10.1002/pssa.2211500206 / phys. stat. sol. (a) by Seitz (1995)
10.1557/PROC-449-227 / Mat. Res. Symp. Proc. MRS by Fujii (1997)
10.1063/1.120138

Dates

Type	When
Created	14 years, 4 months ago (April 5, 2011, 9:20 a.m.)
Deposited	4 years, 5 months ago (Feb. 24, 2021, 5:04 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 9, 2024, 3:57 p.m.)
Issued	28 years, 7 months ago (Jan. 1, 1997)
Published	28 years, 7 months ago (Jan. 1, 1997)
Published Online	14 years, 6 months ago (Feb. 10, 2011)
Published Print	28 years, 7 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{Kisielowski_1997, title={Atomic Scale Aluminum and Strain Distribution in a Gan/AlxGa1−XN Heterostructure}, volume={482}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-482-369}, DOI={10.1557/proc-482-369}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Kisielowski, Christian and Schmidt, Olaf and Yang, Jinwei}, year={1997} }

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