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MRS Proceedings (297)
Abstract

ABSTRACTModels that describe hardness of materials do not account for stress-induced phase transformations that occur under sharp indenters. However, experimental work shows that some materials can be transformed under the indenter into new, high-pressure phases with properties that differ significantly from those of the pristine material. In particular, semiconductors (Si, Ge and other) experience Herzfeld-Mott transition (metallization). Significant volume changes can accompany these transformations. In the present paper, Tanaka's model [1] has been modified to account for reversible phase transformations under contact loading.

Bibliography

Galanov, B. A., Grigor’ev, O. N., & Gogotsi, Y. G. (1997). Effect of Phase Transformations on Hardness of Semiconductors. MRS Proceedings, 481.

Authors 3
  1. B. A. Galanov (first)
  2. O. N. Grigor'ev (additional)
  3. Y. G. Gogotsi (additional)
References 12 Referenced 6
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  8. 10.1007/s100190050011
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  11. 10.1017/CBO9781139171731 / Contact Mechanics by Johnson (1985)
  12. {'key': 'S194642740024387X_ref012', 'volume-title': 'The Mathematical Theory of Plasticity', 'author': 'Hill', 'year': '1959'} / The Mathematical Theory of Plasticity by Hill (1959)
Dates
Type When
Created 14 years, 4 months ago (April 5, 2011, 4:59 a.m.)
Deposited 4 years, 6 months ago (Feb. 24, 2021, 5:03 p.m.)
Indexed 1 year, 4 months ago (April 4, 2024, 2:37 p.m.)
Issued 28 years, 7 months ago (Jan. 1, 1997)
Published 28 years, 7 months ago (Jan. 1, 1997)
Published Online 14 years, 6 months ago (Feb. 10, 2011)
Published Print 28 years, 7 months ago (Jan. 1, 1997)
Funders 0

None

@article{Galanov_1997, title={Effect of Phase Transformations on Hardness of Semiconductors}, volume={481}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-481-249}, DOI={10.1557/proc-481-249}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Galanov, B. A. and Grigor’ev, O. N. and Gogotsi, Y. G.}, year={1997} }