DOI: 10.1557/proc-480-83. Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method

Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method

10.1557/proc-480-83

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

AbstractWe present a sample preparation technique for using transmission electron microscopy (TEM) to profile the dopant in a specified doped region of a very large scale integrated (VLSI) devices. This technique is based on preferential etching of the doped region in silicon. Because the rate at which silicon is etched depends on the dopant concentration, the dopant distribution can be inferred by observing the thickness fringe. Using two-beam approximation and information on the dependence of the etching rate on the concentration, we calculated the intensity of the transmitted electron beam and found that the results agreed well with the observed fringes. In addition, by using a focused ion beam (FIB), we could also observe the dopant distribution in a specified source region of a VLSI device.

Bibliography

Kimura, H., & Shimizu, K. (1997). Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method. MRS Proceedings, 480.

Authors 2

H. Kimura (first)
K. Shimizu (additional)

References 7 Referenced 2

10.1116/1.588485
10.1116/1.587123
10.1116/1.588492
10.1116/1.587124
10.1149/1.2127525 / J. Electrochem. by Sheng (1981)
10.1116/1.588487
{'key': 'S1946427400183162_ref007', 'first-page': '202', 'volume-title': 'Electron Microscopy of Thin Crystals', 'author': 'Hirsch', 'year': '1965'} / Electron Microscopy of Thin Crystals by Hirsch (1965)

Dates

Type	When
Created	14 years, 4 months ago (April 5, 2011, 10:52 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:03 p.m.)
Indexed	3 years, 4 months ago (April 2, 2022, 1:22 p.m.)
Issued	28 years, 7 months ago (Jan. 1, 1997)
Published	28 years, 7 months ago (Jan. 1, 1997)
Published Online	14 years, 6 months ago (Feb. 10, 2011)
Published Print	28 years, 7 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{Kimura_1997, title={Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method}, volume={480}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-480-83}, DOI={10.1557/proc-480-83}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Kimura, H. and Shimizu, K.}, year={1997} }

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