Abstract
ABSTRACTInitial growth of microcrystalline silicon μ-Si:H) deposited on an atomically flat GaAs (001) wafer using a RF glow-discharge decomposition of hydrogen diluted monosilane gas mixture has been studied by means of atomic force microscope (AFM), Auger electron spectroscopy (AES), and cross-sectional transmitssion electron microscopy (XTEM).It is shown that the initial growth of μc-Si:H deposited at a substrate temperature of 50∼250°C consists of four successive stages, i.e., (1) a layer-by-layer growth of a-Si:H up to d ∼5 Å, (2) island formation of a-Si:H, (3) the coalescence of the islands and the nucleation of microcrystallite at d∼ 10–40 Å depending on the growth temperature, and (4) a rapid roughening with microcrystalline growth.
Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (April 5, 2011, 7:34 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:58 p.m.) |
Indexed | 3 years, 5 months ago (March 30, 2022, 5:25 p.m.) |
Issued | 28 years, 8 months ago (Jan. 1, 1997) |
Published | 28 years, 8 months ago (Jan. 1, 1997) |
Published Online | 14 years, 6 months ago (Feb. 15, 2011) |
Published Print | 28 years, 8 months ago (Jan. 1, 1997) |
@article{Saitoh_1997, title={Initial Growth of Microcrystalline Silicon on Atomically Flat Hetero-Substrate}, volume={467}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-467-385}, DOI={10.1557/proc-467-385}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Saitoh, K. and Kondo, M. and Matsuda, A.}, year={1997} }