DOI: 10.1557/proc-449-221. Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

10.1557/proc-449-221

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTGaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

Bibliography

Leung, M. S. H., Klockenbrink, R., Kisielowski, C., Fujii, H., KrÃ¼ger, J., Sudhir, G. S., Anders, A., Liliental-Weber, Z., Rubin, M., & Weber, E. R. (1996). Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source. MRS Proceedings, 449.

Authors 10

M. S. H. Leung (first)
R. Klockenbrink (additional)
C. Kisielowski (additional)
H. Fujii (additional)
J. Krüger (additional)
G. S. Sudhir (additional)
A. Anders (additional)
Z. Liliental-Weber (additional)
M. Rubin (additional)
E. R. Weber (additional)

References 8 Referenced 8

8. Fujii H. , Kisielowski C. , Kruiger J. , Leung M. S. H. , Klockenbrink R. , Sudhir G. S. , Rubin M. , Weber E. R. , these proceedings.
{'key': 'S1946427400241936_ref007', 'first-page': '513', 'volume-title': 'Proceedings of the International Conference on the Physics of Semiconductors (ICPS), Berlin', 'author': 'Kisielowski', 'year': '1996'} / Proceedings of the International Conference on the Physics of Semiconductors (ICPS), Berlin by Kisielowski (1996)
10.1063/1.117786
{'key': 'S1946427400241936_ref003', 'first-page': '18', 'volume-title': 'Proceedings of International Conference on Silicon Carbide and related Materials', 'author': 'Akasaki', 'year': '1995'} / Proceedings of International Conference on Silicon Carbide and related Materials by Akasaki (1995)
10.1063/1.117646
10.1063/1.117656
10.1117/12.239000
10.1088/0963-0252/4/4/008

Dates

Type	When
Created	14 years, 4 months ago (April 6, 2011, 6:20 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:49 p.m.)
Indexed	2 years ago (Aug. 8, 2023, 6:01 p.m.)
Issued	29 years, 7 months ago (Jan. 1, 1996)
Published	29 years, 7 months ago (Jan. 1, 1996)
Published Online	14 years, 6 months ago (Feb. 10, 2011)
Published Print	29 years, 7 months ago (Jan. 1, 1996)

Funders 0

None

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        8,
        8
      ]
    ],
    "date-time": "2023-08-08T22:01:01Z",
    "timestamp": 1691532061589
  },
  "reference-count": 8,
  "publisher": "Springer Science and Business Media LLC",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            10
          ]
        ],
        "date-time": "2011-02-10T00:00:00Z",
        "timestamp": 1297296000000
      },
      "content-version": "unspecified",
      "delay-in-days": 5519,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1996
      ]
    ]
  },
  "abstract": "<jats:title>ABSTRACT</jats:title><jats:p>GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 \u00b5m/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.8<jats:sub>5</jats:sub> meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm<jats:sup>2</jats:sup>/Vs though a minimum carrier concentration of ~ 10<jats:sup>15</jats:sup> cm<jats:sup>\u22123</jats:sup> was achieved.</jats:p>",
  "DOI": "10.1557/proc-449-221",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        4,
        6
      ]
    ],
    "date-time": "2011-04-06T10:20:54Z",
    "timestamp": 1302085254000
  },
  "source": "Crossref",
  "is-referenced-by-count": 8,
  "title": "Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source",
  "prefix": "10.1557",
  "volume": "449",
  "author": [
    {
      "given": "M. S. H.",
      "family": "Leung",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Klockenbrink",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "C.",
      "family": "Kisielowski",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.",
      "family": "Fujii",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Kr\u00fcger",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G. S.",
      "family": "Sudhir",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "A.",
      "family": "Anders",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Z.",
      "family": "Liliental-Weber",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "M.",
      "family": "Rubin",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "E. R.",
      "family": "Weber",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        10
      ]
    ]
  },
  "reference": [
    {
      "key": "S1946427400241936_ref008",
      "unstructured": "8. Fujii H. , Kisielowski C. , Kruiger J. , Leung M. S. H. , Klockenbrink R. , Sudhir G. S. , Rubin M. , Weber E. R. , these proceedings."
    },
    {
      "key": "S1946427400241936_ref007",
      "first-page": "513",
      "volume-title": "Proceedings of the International Conference on the Physics of Semiconductors (ICPS), Berlin",
      "author": "Kisielowski",
      "year": "1996"
    },
    {
      "key": "S1946427400241936_ref005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.117786"
    },
    {
      "key": "S1946427400241936_ref003",
      "first-page": "18",
      "volume-title": "Proceedings of International Conference on Silicon Carbide and related Materials",
      "author": "Akasaki",
      "year": "1995"
    },
    {
      "key": "S1946427400241936_ref004",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.117646"
    },
    {
      "key": "S1946427400241936_ref002",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.117656"
    },
    {
      "key": "S1946427400241936_ref001",
      "doi-asserted-by": "publisher",
      "DOI": "10.1117/12.239000"
    },
    {
      "key": "S1946427400241936_ref006",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0963-0252/4/4/008"
    }
  ],
  "container-title": "MRS Proceedings",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400241936",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T21:49:45Z",
    "timestamp": 1614203385000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/PROC-449-221"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996
      ]
    ]
  },
  "references-count": 8,
  "alternative-id": [
    "S1946427400241936"
  ],
  "URL": "http://dx.doi.org/10.1557/PROC-449-221",
  "relation": {},
  "ISSN": [
    "0272-9172",
    "1946-4274"
  ],
  "subject": [],
  "container-title-short": "MRS Proc.",
  "published": {
    "date-parts": [
      [
        1996
      ]
    ]
  },
  "article-number": "221"
}