Abstract
AbstractWe have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240–970 kV/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.
References
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Dates
Type | When |
---|---|
Created | 14 years, 4 months ago (April 6, 2011, 7:43 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:14 p.m.) |
Indexed | 2 months, 3 weeks ago (June 6, 2025, 5:47 a.m.) |
Issued | 29 years, 7 months ago (Jan. 1, 1996) |
Published | 29 years, 7 months ago (Jan. 1, 1996) |
Published Online | 14 years, 6 months ago (Feb. 10, 2011) |
Published Print | 29 years, 7 months ago (Jan. 1, 1996) |
@article{Basceri_1996, title={Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films}, volume={433}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-433-285}, DOI={10.1557/proc-433-285}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Basceri, C. and Streiffer, S.K. and Kingon, A.I. and Bilodeau, S. and Carl, R. and Buskirk, P.C. Van and Summerfelt, S.R. and Mcintyre, P. and Waser, R.}, year={1996} }