DOI: 10.1557/proc-378-811. Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts

Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts

10.1557/proc-378-811

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

AbstractBarrier heights in metal-semiconductor contacts may be modified by interlayers. The effects of atomic interlayers are due to interface dipoles. With the restriction to nearest-neighbor interactions and monovalent interlayer atoms, they may be described as interface molecules which consist of an interlayer and a substrate atom. If the interlayers are thicker than a few atomic layers their two interfaces with the metal and with the semiconductor will be non-interacting. Both types of interfaces are described by the model that interface-induced gap states determine the alignment of the bands and the electronegativity difference describes the charge transfer across the interface. The present paper discusses and analyzes experimental data for H-modified diamond and silicon, Al/Si/GalnP, and metal/ Si3N4/Si Schottky contacts.

Bibliography

MÃ¶nch, W. (1995). Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts. MRS Proceedings, 378.

Authors 1

Winfried Mönch (first)

References 40 Referenced 3

10.1063/1.100903
10.1063/1.354223
10.1111/j.1749-6632.1963.tb54926.x
10.1063/1.357903
35. Saiz-Pardo R. , Rincon R. , and Flores F. , Appl. Surf. Sci. in print.
10.1103/PhysRevLett.40.1208
10.1098/rspa.1927.0025
31. Stockhausen A. and Mönch W. , unpublished.
10.1021/ja01206a003
10.1143/JJAP.33.L708
10.1016/0039-6028(83)90534-4
10.1116/1.570583
23. Schmitsdorf R.F. , Kampen T.U. , and Mönch W. , Surf. Sci. in print.
10.1007/978-3-662-03134-6
10.1103/PhysRevLett.58.1260
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10.1116/1.582892
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10.1103/PhysRevB.35.6182
9. Mönch W. , Appl. Surf. Sci. in print.
{'key': 'S194642740052822X_ref008', 'volume-title': 'Gallium Arsenide Technology', 'author': 'Mönch', 'year': '1989'} / Gallium Arsenide Technology by Mönch (1989)
{'key': 'S194642740052822X_ref006', 'first-page': '67', 'volume-title': 'Festköperprobleme', 'author': 'Mönch', 'year': '1986'} / Festköperprobleme by Mönch (1986)
{'key': 'S194642740052822X_ref010', 'first-page': 'L19', 'volume': '11', 'author': 'Tejedor', 'year': '1978', 'journal-title': 'J. Phys.'} / J. Phys. by Tejedor (1978)
29. Kampen T.U. and Mönch W. , Surf. Sci. in print.
10.1209/0295-5075/27/6/012
10.1116/1.582892
10.1007/978-1-4613-0795-2_3
{'key': 'S194642740052822X_ref007', 'volume-title': 'The Nature of the Chemical Bond', 'author': 'Pauling', 'year': '1960'} / The Nature of the Chemical Bond by Pauling (1960)
10.1103/PhysRev.138.A1689
10.1007/BF01774216
10.1103/PhysRevLett.52.465
10.1016/0038-1101(71)90049-9
10.1103/PhysRevB.13.4408
10.1116/1.570611
{'key': 'S194642740052822X_ref013', 'first-page': '8083', 'volume': '4', 'author': 'Wang', 'year': '1992', 'journal-title': 'J. Phys.: Condens. Matter'} / J. Phys.: Condens. Matter by Wang (1992)
{'key': 'S194642740052822X_ref014', 'first-page': '1588', 'volume': '3', 'author': 'Miedema', 'year': '1973', 'journal-title': 'F. Phys.'} / F. Phys. by Miedema (1973)
10.1103/PhysRevB.34.2311
10.1063/1.331577
10.1103/PhysRevB.13.2461

Dates

Type	When
Created	14 years, 4 months ago (April 5, 2011, 8:08 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:10 p.m.)
Indexed	1 year, 7 months ago (Feb. 2, 2024, 3:02 p.m.)
Issued	30 years, 8 months ago (Jan. 1, 1995)
Published	30 years, 8 months ago (Jan. 1, 1995)
Published Online	14 years, 6 months ago (Feb. 26, 2011)
Published Print	30 years, 8 months ago (Jan. 1, 1995)

Funders 0

None

BibTeX

@article{M_nch_1995, title={Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts}, volume={378}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-378-811}, DOI={10.1557/proc-378-811}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Mönch, Winfried}, year={1995} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T20:02:09Z",
    "timestamp": 1706904129762
  },
  "reference-count": 40,
  "publisher": "Springer Science and Business Media LLC",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            26
          ]
        ],
        "date-time": "2011-02-26T00:00:00Z",
        "timestamp": 1298678400000
      },
      "content-version": "unspecified",
      "delay-in-days": 5900,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1995
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>Barrier heights in metal-semiconductor contacts may be modified by interlayers. The effects of atomic interlayers are due to interface dipoles. With the restriction to nearest-neighbor interactions and monovalent interlayer atoms, they may be described as interface molecules which consist of an interlayer and a substrate atom. If the interlayers are thicker than a few atomic layers their two interfaces with the metal and with the semiconductor will be non-interacting. Both types of interfaces are described by the model that interface-induced gap states determine the alignment of the bands and the electronegativity difference describes the charge transfer across the interface. The present paper discusses and analyzes experimental data for H-modified diamond and silicon, Al/Si/GalnP, and metal/ Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si Schottky contacts.</jats:p>",
  "DOI": "10.1557/proc-378-811",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        4,
        6
      ]
    ],
    "date-time": "2011-04-06T00:08:57Z",
    "timestamp": 1302048537000
  },
  "source": "Crossref",
  "is-referenced-by-count": 3,
  "title": "Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts",
  "prefix": "10.1557",
  "volume": "378",
  "author": [
    {
      "given": "Winfried",
      "family": "M\u00f6nch",
      "sequence": "first",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        26
      ]
    ]
  },
  "reference": [
    {
      "key": "S194642740052822X_ref040",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.100903"
    },
    {
      "key": "S194642740052822X_ref039",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.354223"
    },
    {
      "key": "S194642740052822X_ref037",
      "doi-asserted-by": "publisher",
      "DOI": "10.1111/j.1749-6632.1963.tb54926.x"
    },
    {
      "key": "S194642740052822X_ref036",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.357903"
    },
    {
      "key": "S194642740052822X_ref035",
      "unstructured": "35. Saiz-Pardo R. , Rincon R. , and Flores F. , Appl. Surf. Sci. in print."
    },
    {
      "key": "S194642740052822X_ref033",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.40.1208"
    },
    {
      "key": "S194642740052822X_ref032",
      "doi-asserted-by": "publisher",
      "DOI": "10.1098/rspa.1927.0025"
    },
    {
      "key": "S194642740052822X_ref031",
      "unstructured": "31. Stockhausen A. and M\u00f6nch W. , unpublished."
    },
    {
      "key": "S194642740052822X_ref030",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ja01206a003"
    },
    {
      "key": "S194642740052822X_ref028",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.33.L708"
    },
    {
      "key": "S194642740052822X_ref026",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0039-6028(83)90534-4"
    },
    {
      "key": "S194642740052822X_ref024",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.570583"
    },
    {
      "key": "S194642740052822X_ref023",
      "unstructured": "23. Schmitsdorf R.F. , Kampen T.U. , and M\u00f6nch W. , Surf. Sci. in print."
    },
    {
      "key": "S194642740052822X_ref022",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/978-3-662-03134-6"
    },
    {
      "key": "S194642740052822X_ref020",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.58.1260"
    },
    {
      "key": "S194642740052822X_ref019",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.35.6298"
    },
    {
      "key": "S194642740052822X_ref017",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.582892"
    },
    {
      "key": "S194642740052822X_ref015",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0038-1101(68)90041-5"
    },
    {
      "key": "S194642740052822X_ref012",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.583544"
    },
    {
      "key": "S194642740052822X_ref011",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.35.6182"
    },
    {
      "key": "S194642740052822X_ref009",
      "unstructured": "9. M\u00f6nch W. , Appl. Surf. Sci. in print."
    },
    {
      "key": "S194642740052822X_ref008",
      "volume-title": "Gallium Arsenide Technology",
      "author": "M\u00f6nch",
      "year": "1989"
    },
    {
      "key": "S194642740052822X_ref006",
      "first-page": "67",
      "volume-title": "Festk\u00f6perprobleme",
      "author": "M\u00f6nch",
      "year": "1986"
    },
    {
      "key": "S194642740052822X_ref010",
      "first-page": "L19",
      "volume": "11",
      "author": "Tejedor",
      "year": "1978",
      "journal-title": "J. Phys."
    },
    {
      "key": "S194642740052822X_ref029",
      "unstructured": "29. Kampen T.U. and M\u00f6nch W. , Surf. Sci. in print."
    },
    {
      "key": "S194642740052822X_ref021",
      "doi-asserted-by": "publisher",
      "DOI": "10.1209/0295-5075/27/6/012"
    },
    {
      "key": "S194642740052822X_ref027",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.582892"
    },
    {
      "key": "S194642740052822X_ref034",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/978-1-4613-0795-2_3"
    },
    {
      "key": "S194642740052822X_ref007",
      "volume-title": "The Nature of the Chemical Bond",
      "author": "Pauling",
      "year": "1960"
    },
    {
      "key": "S194642740052822X_ref002",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRev.138.A1689"
    },
    {
      "key": "S194642740052822X_ref001",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/BF01774216"
    },
    {
      "key": "S194642740052822X_ref005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.52.465"
    },
    {
      "key": "S194642740052822X_ref016",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0038-1101(71)90049-9"
    },
    {
      "key": "S194642740052822X_ref003",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.13.4408"
    },
    {
      "key": "S194642740052822X_ref038",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.570611"
    },
    {
      "key": "S194642740052822X_ref013",
      "first-page": "8083",
      "volume": "4",
      "author": "Wang",
      "year": "1992",
      "journal-title": "J. Phys.: Condens. Matter"
    },
    {
      "key": "S194642740052822X_ref014",
      "first-page": "1588",
      "volume": "3",
      "author": "Miedema",
      "year": "1973",
      "journal-title": "F. Phys."
    },
    {
      "key": "S194642740052822X_ref018",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.34.2311"
    },
    {
      "key": "S194642740052822X_ref025",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.331577"
    },
    {
      "key": "S194642740052822X_ref004",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.13.2461"
    }
  ],
  "container-title": "MRS Proceedings",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S194642740052822X",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T21:10:27Z",
    "timestamp": 1614201027000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/PROC-378-811"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995
      ]
    ]
  },
  "references-count": 40,
  "alternative-id": [
    "S194642740052822X"
  ],
  "URL": "http://dx.doi.org/10.1557/PROC-378-811",
  "relation": {},
  "ISSN": [
    "0272-9172",
    "1946-4274"
  ],
  "subject": [],
  "container-title-short": "MRS Proc.",
  "published": {
    "date-parts": [
      [
        1995
      ]
    ]
  },
  "article-number": "811"
}