DOI: 10.1557/proc-33-259. Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors

Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors

10.1557/proc-33-259

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTAmorphous silicon thin film transistors have been fabricated with a number of different structures and materials. To date, the best performance is obtained with amorphous silicon - silicon nitride thin film transistors in the inverted staggered electrode structure, where the gate insulator and semiconductor are deposited sequentially by plasma enhanced chemical vapour deposition in the same growth apparatus.Localised electron states in the amorphous silicon are crucial in determining transistor performance. Conduction band states (Si-Si antibonding σ*) are broadened and localised in the amorphous network, and their energy distribution determines the field effect mobility. The silicon dangling bond defect is the most important deep localised state and their density determines the prethreshold current and hence the threshold voltage. The density of states is influenced by the gate insulator interface and there is probably a decreasing density of states away from this interface. The silicon dangling bond defect in the bulk amorphous silicon nitride also leads to a localised gap state, which is responsible for the observed threshold voltage instability.Other key material properties include the fixed charge densities associated with primary passivating layers placed on top of the amorphous silicon. The low value of the bulk density of states in the amorphous silicon layer increases the sensitivity of device characteristics to charge at the top interface.

Bibliography

Powell, M. J. (1984). Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors. MRS Proceedings, 33.

Authors 1

M. J. Powell (first)

References 61 Referenced 26

61. Usui S , private communication.
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{'key': 'S1946427400381647_ref057', 'first-page': '2', 'volume': '130', 'author': 'Powell', 'year': '1983', 'journal-title': 'Proc. IEE (Part I)'} / Proc. IEE (Part I) by Powell (1983)
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{'key': 'S1946427400381647_ref052', 'first-page': '204', 'volume-title': 'Insulating Films on Semiconductors', 'author': 'Balk', 'year': '1983'} / Insulating Films on Semiconductors by Balk (1983)
51. Powell M J , Stroomer M V C and Chapman J A , Proceedings of SID, to be published.
{'key': 'S1946427400381647_ref049', 'volume': '42', 'author': 'Kawai', 'year': '1982', 'journal-title': 'SID Symposium Digest'} / SID Symposium Digest by Kawai (1982)
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Dates

Type	When
Created	14 years, 5 months ago (March 6, 2011, 5:41 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:42 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 11:58 a.m.)
Issued	41 years, 7 months ago (Jan. 1, 1984)
Published	41 years, 7 months ago (Jan. 1, 1984)
Published Online	14 years, 6 months ago (Feb. 21, 2011)
Published Print	41 years, 7 months ago (Jan. 1, 1984)

Funders 0

None

BibTeX

@article{Powell_1984, title={Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors}, volume={33}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-33-259}, DOI={10.1557/proc-33-259}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Powell, M. J.}, year={1984} }

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