DOI: 10.1557/proc-316-409. Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix

Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix

10.1557/proc-316-409

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTIon beam synthesis of Si and Ge nanocrystals in an SiO2 matrix is performed by precipitation from supersaturated solid solutions created by ion implantation. Films of SiO2 on (100) Si substrates are implanted with Si and Ge at doses 1 × 1016/cm2 - 5 × 1016/cm2. Implanted samples are subsequently annealed to induce precipitation of Si and Ge nanocrystals. Raman spectroscopy and high-resolution transmission electron microscopy indicate a correlation between visible room-temperature photoluminescence and the formation of diamond cubic nanocrystals approximately 2–5 nm in diameter in annealed samples. As-implanted but unannealed samples do not exhibit luminescence. Rutherford backscattering spectra indicate a steepening of implanted Ge profiles upon annealing. Photoluminescence spectra are correlated with annealing temperatures, and compared with theoretical predictions for various possible luminescence mechanisms, such as radiative recombination of quantum-confined excitons, as well as possible localized state luminescence related to structural defects in SiO2. Potential optoelectronic device applications are also discussed.

Bibliography

Atwater, H. A., Shcheglov, K. V., Wong, S. S., Vahala, K. J., Flagan, R. C., Brongersma, M. L., & Polman, A. (1993). Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix. MRS Proceedings, 316.

Authors 7

H.A. Atwater (first)
K.V. Shcheglov (additional)
S.S. Wong (additional)
K.J. Vahala (additional)
R.C. Flagan (additional)
M.L. Brongersma (additional)
A. Polman (additional)

References 18 Referenced 58

10.1143/JJAP.28.L1464
10.1063/1.108290
10.1063/1.105773
10.1063/1.103561
10.1080/00018739300101484
10.1063/1.333979
{'key': 'S1946427400440686_ref015', 'author': 'Shcheglov', 'year': '1994', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Shcheglov (1994)
10.1103/PhysRevB.47.1397
10.1103/PhysRevB.46.15578
10.1143/JPSJ.62.2663
10.1021/ba-1990-0224.ch028
10.1143/JJAP.32.3840
10.1088/0953-8984/5/31/002
10.1007/978-3-642-97432-8_7
10.1063/1.106269
10.1063/1.108147
{'key': 'S1946427400440686_ref009', 'first-page': '144', 'volume': 'D26', 'author': 'Hayashi', 'year': '1993', 'journal-title': 'Z. Phys.'} / Z. Phys. by Hayashi (1993)
{'key': 'S1946427400440686_ref014', 'volume-title': 'The Stopping and Range of Ions in Solids', 'author': 'Ziegler', 'year': '1985'} / The Stopping and Range of Ions in Solids by Ziegler (1985)

Dates

Type	When
Created	14 years, 5 months ago (March 6, 2011, 5:46 a.m.)
Deposited	4 years, 5 months ago (Feb. 24, 2021, 4:17 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 6:23 a.m.)
Issued	32 years, 7 months ago (Jan. 1, 1993)
Published	32 years, 7 months ago (Jan. 1, 1993)
Published Online	14 years, 6 months ago (Feb. 22, 2011)
Published Print	32 years, 7 months ago (Jan. 1, 1993)

Funders 0

None

BibTeX

@article{Atwater_1993, title={Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix}, volume={316}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-316-409}, DOI={10.1557/proc-316-409}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Atwater, H.A. and Shcheglov, K.V. and Wong, S.S. and Vahala, K.J. and Flagan, R.C. and Brongersma, M.L. and Polman, A.}, year={1993} }

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