Abstract
AbstractIn this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.
References
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 5, 2011, 7:38 p.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:13 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 7, 2024, 1:07 a.m.) |
Issued | 32 years, 7 months ago (Jan. 1, 1993) |
Published | 32 years, 7 months ago (Jan. 1, 1993) |
Published Online | 14 years, 6 months ago (Feb. 21, 2011) |
Published Print | 32 years, 7 months ago (Jan. 1, 1993) |
@article{Keuser_1993, title={Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films}, volume={310}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-310-223}, DOI={10.1557/proc-310-223}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Keuser, M. De and Veldhoven, P.J. Van and Dorman, G.J.M.}, year={1993} }