Crossref
journal-article
Springer Science and Business Media LLC
MRS Proceedings (297)
Abstract
AbstractGrain-bondary erosion-type voids and transgranular slit-like voids are found to be two competing electromigration failure modes in VLSI interconnects. The effects of interconnect linewidth, microstructure, process variables and stress conditions on the two failure modes were studied.
References
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 3, 2011, 11:10 a.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 4:12 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 2, 2024, 3:38 p.m.) |
Issued | 32 years, 7 months ago (Jan. 1, 1993) |
Published | 32 years, 7 months ago (Jan. 1, 1993) |
Published Online | 14 years, 6 months ago (Feb. 21, 2011) |
Published Print | 32 years, 7 months ago (Jan. 1, 1993) |
@article{Atakov_1993, title={Characterization of Two Electromigration Failure Modes In Submicron Vlsi}, volume={309}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-309-133}, DOI={10.1557/proc-309-133}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Atakov, Em and Clement, JJ. and Miner, B.}, year={1993} }