Abstract
ABSTRACTThe modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.
References
7
Referenced
34
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 5, 2011, 8:10 p.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 4:09 p.m.) |
Indexed | 3 months, 4 weeks ago (April 24, 2025, 7:44 a.m.) |
Issued | 32 years, 7 months ago (Jan. 1, 1993) |
Published | 32 years, 7 months ago (Jan. 1, 1993) |
Published Online | 14 years, 6 months ago (Feb. 21, 2011) |
Published Print | 32 years, 7 months ago (Jan. 1, 1993) |
@article{Knoll_1993, title={Fundamentals of Semiconductor Detectors for Ionizing Radiation}, volume={302}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-302-3}, DOI={10.1557/proc-302-3}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Knoll, G.F. and Mcgregor, D.S.}, year={1993} }