DOI: 10.1557/proc-301-87. Ic Compatible Processing of Si:Er for optoelectronics

Ic Compatible Processing of Si:Er for optoelectronics

10.1557/proc-301-87

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTWe have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3 Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of δHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.

Bibliography

Ren, F. Y. G., Michel, J., Sun-Paduano, Q., Zheng, B., Kitagawa, H., Jacobson, D. C., Poate, J. M., & Kimerling, L. C. (1993). Ic Compatible Processing of Si:Er for optoelectronics. MRS Proceedings, 301.

Authors 8

F. Y. G. Ren (first)
J. Michel (additional)
Q. Sun-Paduano (additional)
B. Zheng (additional)
H. Kitagawa (additional)
D.C. Jacobson (additional)
J.M. Poate (additional)
L. C. Kimerling (additional)

References 13 Referenced 56

{'key': 'S1946427400389527_ref007', 'first-page': '15', 'volume-title': 'Progress in Materials Science 11', 'author': 'Hirth', 'year': '1963'} / Progress in Materials Science 11 by Hirth (1963)
[12] Lannoo M. and Delerue C. , (MRS Proceedings) this volume.
{'key': 'S1946427400389527_ref011', 'first-page': '1', 'volume': '7', 'author': 'Yassievich', 'year': '1993', 'journal-title': 'Semicond. Sci. Technol.'} / Semicond. Sci. Technol. by Yassievich (1993)
10.1063/1.89200
10.1063/1.349306
10.1063/1.96532
{'key': 'S1946427400389527_ref004', 'first-page': '142', 'volume-title': 'Silicides for VLSI Applications', 'author': 'Murarka', 'year': '1983'} / Silicides for VLSI Applications by Murarka (1983)
10.1002/j.1538-7305.1960.tb03928.x
10.1063/1.104739
10.1063/1.349382
{'key': 'S1946427400389527_ref009', 'first-page': '69', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze', 'year': '1981'} / Physics of Semiconductor Devices by Sze (1981)
10.1049/el:19881025
10.1063/1.94190

Dates

Type	When
Created	14 years, 5 months ago (March 3, 2011, 10:10 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:09 p.m.)
Indexed	3 months, 1 week ago (May 26, 2025, 8:27 a.m.)
Issued	32 years, 8 months ago (Jan. 1, 1993)
Published	32 years, 8 months ago (Jan. 1, 1993)
Published Online	14 years, 6 months ago (Feb. 21, 2011)
Published Print	32 years, 8 months ago (Jan. 1, 1993)

Funders 0

None

BibTeX

@article{Ren_1993, title={Ic Compatible Processing of Si:Er for optoelectronics}, volume={301}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-301-87}, DOI={10.1557/proc-301-87}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Ren, F. Y. G. and Michel, J. and Sun-Paduano, Q. and Zheng, B. and Kitagawa, H. and Jacobson, D.C. and Poate, J.M. and Kimerling, L. C.}, year={1993} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        26
      ]
    ],
    "date-time": "2025-05-26T12:27:26Z",
    "timestamp": 1748262446336
  },
  "reference-count": 13,
  "publisher": "Springer Science and Business Media LLC",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            21
          ]
        ],
        "date-time": "2011-02-21T00:00:00Z",
        "timestamp": 1298246400000
      },
      "content-version": "unspecified",
      "delay-in-days": 6625,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1993
      ]
    ]
  },
  "abstract": "<jats:title>ABSTRACT</jats:title><jats:p>We have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er<jats:sub>3</jats:sub> Si<jats:sub>5</jats:sub> is the most stable silicid formed; and it can be oxidized into Er<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> at high temperature under any oxidizing conditions. Among Er compounds, Er<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> luminesces and Er<jats:sub>3</jats:sub>Si<jats:sub>5</jats:sub> and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) \u223c 10<jats:sup>\u221212</jats:sup>cm<jats:sup>2</jats:sup>/s at 1300 C and \u223c 10<jats:sup>\u221215</jats:sup>cm<jats:sup>2</jats:sup>/s at 900 C, and a migration enthalpy of \u03b4H<jats:sub>m</jats:sub>(Er) \u223c 4.6 eV. The equilibrium solubility of Er in Si is in the range of 10<jats:sup>16</jats:sup> cm<jats:sup>\u22123</jats:sup> at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.</jats:p>",
  "DOI": "10.1557/proc-301-87",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        3,
        3
      ]
    ],
    "date-time": "2011-03-03T15:10:46Z",
    "timestamp": 1299165046000
  },
  "source": "Crossref",
  "is-referenced-by-count": 56,
  "title": "Ic Compatible Processing of Si:Er for optoelectronics",
  "prefix": "10.1557",
  "volume": "301",
  "author": [
    {
      "given": "F. Y. G.",
      "family": "Ren",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Michel",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Q.",
      "family": "Sun-Paduano",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "B.",
      "family": "Zheng",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.",
      "family": "Kitagawa",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "D.C.",
      "family": "Jacobson",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.M.",
      "family": "Poate",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "L. C.",
      "family": "Kimerling",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "S1946427400389527_ref007",
      "first-page": "15",
      "volume-title": "Progress in Materials Science 11",
      "author": "Hirth",
      "year": "1963"
    },
    {
      "key": "S1946427400389527_ref012",
      "unstructured": "[12] Lannoo M. and Delerue C. , (MRS Proceedings) this volume."
    },
    {
      "key": "S1946427400389527_ref011",
      "first-page": "1",
      "volume": "7",
      "author": "Yassievich",
      "year": "1993",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "S1946427400389527_ref008",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.89200"
    },
    {
      "key": "S1946427400389527_ref005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.349306"
    },
    {
      "key": "S1946427400389527_ref003",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.96532"
    },
    {
      "key": "S1946427400389527_ref004",
      "first-page": "142",
      "volume-title": "Silicides for VLSI Applications",
      "author": "Murarka",
      "year": "1983"
    },
    {
      "key": "S1946427400389527_ref010",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/j.1538-7305.1960.tb03928.x"
    },
    {
      "key": "S1946427400389527_ref006",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.104739"
    },
    {
      "key": "S1946427400389527_ref002",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.349382"
    },
    {
      "key": "S1946427400389527_ref009",
      "first-page": "69",
      "volume-title": "Physics of Semiconductor Devices",
      "author": "Sze",
      "year": "1981"
    },
    {
      "key": "S1946427400389527_ref013",
      "doi-asserted-by": "publisher",
      "DOI": "10.1049/el:19881025"
    },
    {
      "key": "S1946427400389527_ref001",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.94190"
    }
  ],
  "container-title": "MRS Proceedings",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400389527",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T21:09:19Z",
    "timestamp": 1614200959000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/PROC-301-87"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993
      ]
    ]
  },
  "references-count": 13,
  "alternative-id": [
    "S1946427400389527"
  ],
  "URL": "http://dx.doi.org/10.1557/PROC-301-87",
  "relation": {},
  "ISSN": [
    "0272-9172",
    "1946-4274"
  ],
  "subject": [],
  "container-title-short": "MRS Proc.",
  "published": {
    "date-parts": [
      [
        1993
      ]
    ]
  },
  "article-number": "87"
}