DOI: 10.1557/proc-283-241. Radiative and Non-Radiative Processes for the light Emission from Porous Silicon

Radiative and Non-Radiative Processes for the light Emission from Porous Silicon

10.1557/proc-283-241

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTHighly porous silicon, well passivated via an anodic oxidation process, is a stable and efficient visible light emitter showing a 3% photoluminescence efficiency at room temperature. Luminescence decay times are on the order of 100 μs at room temperature and 10 ms at low temperature. Above room temperature the de-excitation is dominated by non-radiative processes well describe by a tunnelling escape of carriers from confined regions. The “anomalous” luminescence behaviour showing a dramatic increase of the lifetimes upon cooling associated with a decrease of the intensity is explained by the temperature dependence of the effective radiative recombination rates due to a population redistribution among two excited states with very different radiative relaxation rates.

Bibliography

Vial, J. C., Bsiesy, A., Fishman, G., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R., & Macfarlane, R. M. (1992). Radiative and Non-Radiative Processes for the light Emission from Porous Silicon. MRS Proceedings, 283.

Authors 9

J. C. Vial (first)
A. Bsiesy (additional)
G. Fishman (additional)
F. Gaspard (additional)
R. Herino (additional)
M. Ligeon (additional)
F. Muller (additional)
R. Romestain (additional)
R. M. Macfarlane (additional)

References 21 Referenced 14

10.1063/1.102921
17. Calcott P. D. J. , Nash K. J. , Canham L. T. , Kane M. J. and Brumhead D. , to be published.
10.1063/1.438535
10.1063/1.106482
10.1063/1.106770
6. Kawaguchi T. and Miyazima S. , presented at the 1992 A.P.S. March meeting, Indianapolis (unpublished).
{'key': 'S1946427400569607_ref009', 'first-page': '179', 'volume-title': 'Light Emission from Silicon', 'volume': '256', 'author': 'Hybertsen', 'year': '1992'} / Light Emission from Silicon by Hybertsen (1992)
10.1109/55.116957
10.1103/PhysRev.154.763
{'key': 'S1946427400569607_ref002', 'first-page': '215', 'volume-title': 'Light Emission from Silicon', 'volume': '256', 'author': 'Billat', 'year': '1992'} / Light Emission from Silicon by Billat (1992)
10.1063/1.103561
10.1002/pssb.2221370131
10.1103/PhysRevB.45.14171
10.1103/PhysRevB.23.861
10.1103/PhysRevB.17.4821
10.1088/0022-3719/17/6/003
10.1063/1.108372
8. Vial J.C. , Billat S. , Bsiesy A. , Fishman G. , Gaspard F. , Herino R. , Ligeon M. , Madéore F. , Mihalcescu I. , Muller F. and Romestain R. , Physica B to be published.
{'key': 'S1946427400569607_ref010', 'first-page': '2383', 'volume-title': 'The physics of semiconductors', 'volume': '3', 'author': 'Petrova-Koch', 'year': '1991'} / The physics of semiconductors by Petrova-Koch (1991)
{'key': 'S1946427400569607_ref021', 'first-page': '269', 'volume-title': 'Polarons and Excitons', 'author': 'Elliott', 'year': '1963'} / Polarons and Excitons by Elliott (1963)
10.1063/1.333979

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 8:40 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:53 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 6:43 p.m.)
Issued	33 years, 8 months ago (Jan. 1, 1992)
Published	33 years, 8 months ago (Jan. 1, 1992)
Published Online	14 years, 6 months ago (Feb. 28, 2011)
Published Print	33 years, 8 months ago (Jan. 1, 1992)

Funders 0

None

BibTeX

@article{Vial_1992, title={Radiative and Non-Radiative Processes for the light Emission from Porous Silicon}, volume={283}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-283-241}, DOI={10.1557/proc-283-241}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Vial, J. C. and Bsiesy, A. and Fishman, G. and Gaspard, F. and Herino, R. and Ligeon, M. and Muller, F. and Romestain, R. and Macfarlane, R. M.}, year={1992} }

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