DOI: 10.1557/proc-263-485. Control of threading dislocations in lattice-mismatched heteroepitaxy

Control of threading dislocations in lattice-mismatched heteroepitaxy

10.1557/proc-263-485

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTIt is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.

Bibliography

Schowalter, L. J., Taylor, A. P., Petruzzello, J., Gaines, J., & Olego, D. (1992). Control of threading dislocations in lattice-mismatched heteroepitaxy. MRS Proceedings, 263.

Authors 5

L.J. Schowalter (first)
A.P. Taylor (additional)
J. Petruzzello (additional)
J. Gaines (additional)
D. Olego (additional)

References 13 Referenced 2

10.1103/PhysRevLett.66.2903
10.1063/1.1655171
10.1063/1.98004
10.1063/1.346458
{'key': 'S1946427400506071_ref004', 'first-page': '118', 'volume': '27', 'author': 'Matthews', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth by Matthews (1974)
10.1063/1.105045
[2] Schowalter L.J. , Taylor A.P. , Xiao Q.-F. , Petruzzello J. , Cammack D. , and Olego D. , Poster Presentation, Spring MRS Meeting (1990).
10.1080/09500839108206597
10.1063/1.340059
10.1063/1.344183
10.1016/0167-577X(85)90132-6
10.1016/0040-6090(76)90085-7
10.1063/1.342834

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 7:56 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:11 p.m.)
Indexed	3 years, 5 months ago (April 1, 2022, 6:45 p.m.)
Issued	33 years, 8 months ago (Jan. 1, 1992)
Published	33 years, 8 months ago (Jan. 1, 1992)
Published Online	14 years, 6 months ago (Feb. 25, 2011)
Published Print	33 years, 8 months ago (Jan. 1, 1992)

Funders 0

None

BibTeX

@article{Schowalter_1992, title={Control of threading dislocations in lattice-mismatched heteroepitaxy}, volume={263}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-263-485}, DOI={10.1557/proc-263-485}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Schowalter, L.J. and Taylor, A.P. and Petruzzello, J. and Gaines, J. and Olego, D.}, year={1992} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2022,
        4,
        1
      ]
    ],
    "date-time": "2022-04-01T22:45:33Z",
    "timestamp": 1648853133599
  },
  "reference-count": 13,
  "publisher": "Springer Science and Business Media LLC",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            2,
            25
          ]
        ],
        "date-time": "2011-02-25T00:00:00Z",
        "timestamp": 1298592000000
      },
      "content-version": "unspecified",
      "delay-in-days": 6995,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1992
      ]
    ]
  },
  "abstract": "<jats:title>ABSTRACT</jats:title><jats:p>It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In<jats:sub>1\u2212x</jats:sub>Ga<jats:sub>x</jats:sub>As on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In<jats:sub>1\u2212x</jats:sub>Ga<jats:sub>x</jats:sub>As.</jats:p>",
  "DOI": "10.1557/proc-263-485",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        3,
        6
      ]
    ],
    "date-time": "2011-03-06T00:56:31Z",
    "timestamp": 1299372991000
  },
  "source": "Crossref",
  "is-referenced-by-count": 2,
  "title": "Control of threading dislocations in lattice-mismatched heteroepitaxy",
  "prefix": "10.1557",
  "volume": "263",
  "author": [
    {
      "given": "L.J.",
      "family": "Schowalter",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "A.P.",
      "family": "Taylor",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Petruzzello",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Gaines",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "D.",
      "family": "Olego",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        25
      ]
    ]
  },
  "reference": [
    {
      "key": "S1946427400506071_ref010",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.66.2903"
    },
    {
      "key": "S1946427400506071_ref009",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1655171"
    },
    {
      "key": "S1946427400506071_ref007",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.98004"
    },
    {
      "key": "S1946427400506071_ref006",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.346458"
    },
    {
      "key": "S1946427400506071_ref004",
      "first-page": "118",
      "volume": "27",
      "author": "Matthews",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "S1946427400506071_ref003",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.105045"
    },
    {
      "key": "S1946427400506071_ref002",
      "unstructured": "[2] Schowalter L.J. , Taylor A.P. , Xiao Q.-F. , Petruzzello J. , Cammack D. , and Olego D. , Poster Presentation, Spring MRS Meeting (1990)."
    },
    {
      "key": "S1946427400506071_ref013",
      "doi-asserted-by": "publisher",
      "DOI": "10.1080/09500839108206597"
    },
    {
      "key": "S1946427400506071_ref005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.340059"
    },
    {
      "key": "S1946427400506071_ref001",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.344183"
    },
    {
      "key": "S1946427400506071_ref008",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0167-577X(85)90132-6"
    },
    {
      "key": "S1946427400506071_ref011",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0040-6090(76)90085-7"
    },
    {
      "key": "S1946427400506071_ref012",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.342834"
    }
  ],
  "container-title": "MRS Proceedings",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400506071",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T20:11:39Z",
    "timestamp": 1614197499000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/PROC-263-485"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992
      ]
    ]
  },
  "references-count": 13,
  "alternative-id": [
    "S1946427400506071"
  ],
  "URL": "http://dx.doi.org/10.1557/PROC-263-485",
  "relation": {},
  "ISSN": [
    "0272-9172",
    "1946-4274"
  ],
  "subject": [],
  "container-title-short": "MRS Proc.",
  "published": {
    "date-parts": [
      [
        1992
      ]
    ]
  },
  "article-number": "485"
}