Abstract
ABSTRACTThe photoluminescence (PL) and X-band ODMR of porous Si layers is described and discussed. The layers were prepared by anodizing the (100) face of a Si wafer at 20 mA/cm2 in 20% HF for 5 mai and passively soaking them in 36% HF for up to 10 hrs. The PL was broad and featureless, extending from ˜1.5 to ˜2.1 eV and peaking at 1.68 eV. Its intensity slightly increased upon cooling to 90 K, and then strongly decreased at lower temperatures. A ˜20 G wide asymmetric PL-enhancing ODMR was observed at g ˜2.0031 ±I 0.0009, which could be fit to a sum of two Gaussians. Their g-values were slightly temperature dependent. The ODMR intensity strongly decreased with increasing temperature, and was unobservable above ˜80 K. The results are compared to the optical properties of hydrogenated amorphous Si.
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 5, 2011, 8:45 p.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 3:06 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 1:42 a.m.) |
Issued | 34 years, 7 months ago (Jan. 1, 1991) |
Published | 34 years, 7 months ago (Jan. 1, 1991) |
Published Online | 14 years, 6 months ago (Feb. 15, 2011) |
Published Print | 34 years, 7 months ago (Jan. 1, 1991) |
@article{Lane_1991, title={Photoluminescence (PL) and Optically Detected Magnetic Resonance (ODMR) Study of Visible Light Emission from Porous Si}, volume={256}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-256-169}, DOI={10.1557/proc-256-169}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Lane, P. A. and Swanson, L. S. and Shinar, J. and Chumbley, S.}, year={1991} }