DOI: 10.1557/proc-239-695. Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage

Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage

10.1557/proc-239-695

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTIn the narrow, confined metal interconnects used in the chip level, electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Recently there has been a growing concern on the effects of preceding stress-migration on the subsequent electromigration damage. We present here an electromigration model, which is able to address the effects of stress-migration and mechanical stresses on electromigration lifetime.

Bibliography

Korhonen, M. A., BÃ¸rgesen, P., & Li, C.-Y. (1991). Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage. MRS Proceedings, 239.

Authors 3

M. A. Korhonen (first)
P. Børgesen (additional)
Che-Yu Li (additional)

References 12 Referenced 6

5. Tu K.N. , “Electromigration in stressed thin films”, 1991 (unpublished)
10.1063/1.347457
10.1063/1.349852
10.1063/1.105289
10.1557/PROC-239-683
6. Korhonen M.A. , Bergesen P. , Tu K.N. and Li Che-Yu , 1992 (to be published)
{'key': 'S1946427400436316_ref009', 'first-page': '1', 'volume-title': 'Proc. 21st Int. Reliability Physics Symp.', 'author': 'Thomas', 'year': '1983'} / Proc. 21st Int. Reliability Physics Symp. by Thomas (1983)
{'key': 'S1946427400436316_ref007', 'first-page': '35', 'volume-title': 'Materials Reliability Issues in Microelectronics', 'volume': '225', 'author': 'Ross', 'year': '1991'} / Materials Reliability Issues in Microelectronics by Ross (1991)
{'key': 'S1946427400436316_ref010', 'first-page': '242', 'volume-title': 'Proc. 22nd Int. Reliability Physics Symp.', 'author': 'Levine', 'year': '1984'} / Proc. 22nd Int. Reliability Physics Symp. by Levine (1984)
10.1063/1.89024
10.1016/0022-3115(79)90147-8
{'key': 'S1946427400436316_ref008', 'first-page': '64', 'volume-title': 'Proc. 29th Int. Reliability Physics Symp.', 'author': 'Hemmert', 'year': '1991'} / Proc. 29th Int. Reliability Physics Symp. by Hemmert (1991)

Dates

Type	When
Created	14 years, 6 months ago (March 6, 2011, 4:20 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 2:58 p.m.)
Indexed	1 year, 7 months ago (Feb. 2, 2024, 3:42 p.m.)
Issued	34 years, 8 months ago (Jan. 1, 1991)
Published	34 years, 8 months ago (Jan. 1, 1991)
Published Online	14 years, 6 months ago (Feb. 22, 2011)
Published Print	34 years, 8 months ago (Jan. 1, 1991)

Funders 0

None

BibTeX

@article{Korhonen_1991, title={Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage}, volume={239}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-239-695}, DOI={10.1557/proc-239-695}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Korhonen, M. A. and Børgesen, P. and Li, Che-Yu}, year={1991} }

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