DOI: 10.1557/proc-199-271. Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching

Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching

10.1557/proc-199-271

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTA procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined. The investigation of the morphology, structure and local chemistry of precisely selected regions of semiconductor devices becomes increasingly important since the lateral dimensions and layer thickness of device structures are continually being reduced. The standard technique of preparing specimens for TEM, whether planar or cross-sectional, cannot select particular small regions. Some techniques and a number of tools and fixtures have been proposed which allow us to prepare TEM specimen of prespecified locations in complex devices. Most of these techniques, however, are still very difficult, tedious process and time consuming.A new technique has been proposed recently involving the use of FIB. The technique ensures that the preselected area of submicron scale will be located in the electron transparent section used for TEM imaging, in preparation turn-around time of about two hours. The TEM imaging of specific contacts via hole in a VLSI chip is illustrated.

Bibliography

Park, K. (1990). Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching. MRS Proceedings, 199.

Authors 1

Kyung-ho Park (first)

References 13 Referenced 31

12) Glanville J. , Solid State Technology, May, 271 (1989).
11) Kirk E. C. G. , Williams D. A. and Ahmed H. , 6th Microscopy of Semiconducting Materials, Proc. Inst. of Phys. Conf., 100, 501 (1989).
10.1017/S0424820100155530 / Proc. Of Electron Microscopy Society of America by Klepeis (1989)
10.1557/PROC-115-253
10.1116/1.583525
10.1149/1.2129742
10.1063/1.1663778
10.1557/PROC-115-179
10) Anderson R. , Klepeis S. , Benedict J. , Vandygrift W. G. and Orndorff M. 6th Microscopy of Semiconducting Materials, Proc. Inst. of Phys. Conf., 100, 491 (1989).
10.1002/jemt.1060010106
{'key': 'S1946427400361565_ref013', 'volume': '43', 'author': 'Nikawa', 'year': '1989', 'journal-title': 'Proc. of 1989 International Reliability Physics Symposium'} / Proc. of 1989 International Reliability Physics Symposium by Nikawa (1989)
10.1557/PROC-115-109
10.1557/PROC-62-25

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 7:39 p.m.)
Deposited	3 years, 9 months ago (Nov. 19, 2021, 5:52 p.m.)
Indexed	2 months, 4 weeks ago (May 30, 2025, 1:22 a.m.)
Issued	35 years, 7 months ago (Jan. 1, 1990)
Published	35 years, 7 months ago (Jan. 1, 1990)
Published Online	14 years, 6 months ago (Feb. 16, 2011)
Published Print	35 years, 7 months ago (Jan. 1, 1990)

Funders 0

None

BibTeX

@article{Park_1990, title={Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching}, volume={199}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-199-271}, DOI={10.1557/proc-199-271}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Park, Kyung-ho}, year={1990} }

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