Abstract
ABSTRACTA new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.
References
8
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 5, 2011, 7:39 p.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 3:33 p.m.) |
Indexed | 2 months ago (June 19, 2025, 2:23 p.m.) |
Issued | 35 years, 7 months ago (Jan. 1, 1990) |
Published | 35 years, 7 months ago (Jan. 1, 1990) |
Published Online | 14 years, 6 months ago (Feb. 16, 2011) |
Published Print | 35 years, 7 months ago (Jan. 1, 1990) |
@article{Young_1990, title={Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam}, volume={199}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-199-205}, DOI={10.1557/proc-199-205}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Young, R. J. and Kirk, E. C. G. and Williams, D. A. and Ahmed, H.}, year={1990} }