DOI: 10.1557/proc-148-163. Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

10.1557/proc-148-163

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Bibliography

Marshall, E. D., Lau, S. S., PalmstrÃ¸m, C. J., Sands, T., Schwartz, C. L., Schwarz, S. A., Harbison, J. P., & Florez, L. T. (1989). Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System. MRS Proceedings, 148.

Authors 8

E.D. Marshall (first)
S.S. Lau (additional)
C.J. Palmstrøm (additional)
T. Sands (additional)
C.L. Schwartz (additional)
S.A. Schwarz (additional)
J.P. Harbison (additional)
L.T. Florez (additional)

References 8 Referenced 20

10.1557/JMR.1988.0914
10.1063/1.339860
10.1116/1.571152
10.1063/1.339705
10.1063/1.100872
10.1557/JMR.1988.0922
10.1557/PROC-126-283
{'key': 'S1946427400474828_ref002', 'first-page': '195', 'volume-title': 'Gallium Arsenide', 'author': 'Palmstrøm', 'year': '1985'} / Gallium Arsenide by Palmstrøm (1985)

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 10:39 p.m.)
Deposited	4 years, 5 months ago (Feb. 24, 2021, 2:48 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 12:25 a.m.)
Issued	36 years, 7 months ago (Jan. 1, 1989)
Published	36 years, 7 months ago (Jan. 1, 1989)
Published Online	14 years, 5 months ago (Feb. 25, 2011)
Published Print	36 years, 7 months ago (Jan. 1, 1989)

Funders 0

None

BibTeX

@article{Marshall_1989, title={Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System}, volume={148}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-148-163}, DOI={10.1557/proc-148-163}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Marshall, E.D. and Lau, S.S. and Palmstrøm, C.J. and Sands, T. and Schwartz, C.L. and Schwarz, S.A. and Harbison, J.P. and Florez, L.T.}, year={1989} }

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