DOI: 10.1557/proc-116-79. Mocvd Growth of GaAs on Si

10.1557/proc-116-79

Crossref journal-article

Springer Science and Business Media LLC

MRS Proceedings (297)

Abstract

AbstractThe initial stage of the growth of GaAs on Si by, MOCVD, the reduction of the residual dislocations by annealing at high temperatures and the dependence of the growth temperature on the stress in the GaAs layer were studied. The density and the size of deposited GaAs islands at the initial stage of the growth in the two-step growth sequence strongly affected the domain property of the subsequently grown layer. For reducing the residual dislocations by annealing at high temperatures, to repeat the growth and the annealing was more effective method compared with the other annealing methods we tried. The stress in the GaAs layers showed a constant value independently of the growth temperature and the value was related to the thermal expansion between room temperature and about 350°C.

Bibliography

Akiyama, M., Ueda, T., & Onozawa, S. (1988). Mocvd Growth of GaAs on Si. MRS Proceedings, 116.

Authors 3

Masahiro Akiyama (first)
Takash Ueda (additional)
Sachiko Onozawa (additional)

References 21 Referenced 12

10.1063/1.97556
10.1557/PROC-67-45
10.1063/1.1656991
10.1143/JJAP.26.L163 / Jpn. J. Appl. Phys. by Ishida (1987)
10.1557/PROC-91-99
10.1143/JJAP.26.L1950
10.1063/1.97956
10.1063/1.98117
10.1143/JJAP.26.L1141
10.1143/JJAP.25.L288
10.1557/PROC-91-3
{'key': 'S1946427400571966_ref021', 'volume': '147', 'author': 'Yokoyama', 'year': '1987', 'journal-title': 'Ext. Abst. 19th Conf. Solid State Dev. and Mat.'} / Ext. Abst. 19th Conf. Solid State Dev. and Mat. by Yokoyama (1987)
{'key': 'S1946427400571966_ref002', 'volume': '91', 'year': '1987', 'journal-title': 'Mat. Res. Soc. Symp. Proc.'} / Mat. Res. Soc. Symp. Proc. (1987)
10.1063/1.335363
10.1063/1.1661935
10.1143/JJAP.23.L843
10.1143/JJAP.26.L584
10.1063/1.96988
{'key': 'S1946427400571966_ref001', 'volume': '67', 'year': '1986', 'journal-title': 'Mat. Res. Soc. Symp. Proc.'} / Mat. Res. Soc. Symp. Proc. (1986)
{'key': 'S1946427400571966_ref017', 'first-page': '253', 'volume': '13', 'author': 'Shimizu', 'year': '1986', 'journal-title': 'J. Jpn. Assoc. Cryst. Growth'} / J. Jpn. Assoc. Cryst. Growth by Shimizu (1986)
{'key': 'S1946427400571966_ref005', 'volume': '109', 'author': 'Takasugi', 'year': '1986', 'journal-title': 'Ext. Abst. 18th Conf. Solid State Dev. and Mat.'} / Ext. Abst. 18th Conf. Solid State Dev. and Mat. by Takasugi (1986)

Dates

Type	When
Created	14 years, 5 months ago (March 6, 2011, 2:59 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 2:57 p.m.)
Indexed	2 years, 6 months ago (Feb. 16, 2023, 12:30 p.m.)
Issued	37 years, 7 months ago (Jan. 1, 1988)
Published	37 years, 7 months ago (Jan. 1, 1988)
Published Online	14 years, 5 months ago (Feb. 28, 2011)
Published Print	37 years, 7 months ago (Jan. 1, 1988)

Funders 0

None

BibTeX

@article{Akiyama_1988, title={Mocvd Growth of GaAs on Si}, volume={116}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-116-79}, DOI={10.1557/proc-116-79}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Akiyama, Masahiro and Ueda, Takash and Onozawa, Sachiko}, year={1988} }

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