Abstract
ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.
References
8
Referenced
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10.1116/1.583937
Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 6, 2011, 5:13 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:03 p.m.) |
Indexed | 1 year, 10 months ago (Oct. 26, 2023, 10:57 p.m.) |
Issued | 38 years, 8 months ago (Jan. 1, 1987) |
Published | 38 years, 8 months ago (Jan. 1, 1987) |
Published Online | 14 years, 6 months ago (Feb. 26, 2011) |
Published Print | 38 years, 8 months ago (Jan. 1, 1987) |
@article{Harriott_1987, title={Focused Ion Beam Sims for Micromachining Applications}, volume={101}, ISSN={1946-4274}, url={http://dx.doi.org/10.1557/proc-101-483}, DOI={10.1557/proc-101-483}, journal={MRS Proceedings}, publisher={Springer Science and Business Media LLC}, author={Harriott, L. R. and Vasile, M. J.}, year={1987} }