DOI: 10.1557/jmr.2003.0198. Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor

10.1557/jmr.2003.0198

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

The effect of Mg in Ag(Mg)/SiO2/Si multilayers on the adhesion, passivation, and resistivity following vacuum annealing at 200–500 °C has been investigated. The annealing of Ag(Mg)/SiO2/Si multilayers produced surface and interfacial MgO layers, resulting in a MgO/Ag/MgO/SiO2/Si structure. The formation of a surface MgO/Ag bilayer structure provided excellent passivation against air and CF4 plasma chemistry. In addition, the adhesion of Ag to SiO2 was improved due to the formation of an interfacial MgO layer resulting from the reaction of segregated Mg with SiO2. However, the negligible solubility of Si in Ag prevented the dissolution of free silicon into the Ag(Mg) film produced from the reaction Mg + SiO2 = MgO + free Si, which in turn limited the reaction between Mg and SiO2, which led to a decrease in the adhesion of Ag to SiO2 at the higher temperature. The use of an O2 plasma prior to Ag(Mg) alloy deposition on SiO2 produced an oxygen-rich surface on the SiO2, which allowed for the enhanced reaction of the segregated Mg and SiO2 at the surface, thus resulting in markedly increased adhesion properties.

Bibliography

Lee, J., Yang, H., Lee, J., Shin, H., Kim, J., Jeong, C., Cho, B., Chung, K., & Lee, E. (2003). Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor. Journal of Materials Research, 18(6), 1441â1446.

Authors 9

Jaegab Lee (first)
Heejung Yang (additional)
Jinhyung Lee (additional)
Hyunjung Shin (additional)
Jiyoung Kim (additional)
Changoh Jeong (additional)
Beomseok Cho (additional)
Kyuha Chung (additional)
Eungu Lee (additional)

References 14 Referenced 2

10.1063/1.111408
10.1016/0040-6090(95)05837-0
10.1149/1.1393855
10.1116/1.1316101
{'key': 'S0884291400064244_ref006', 'first-page': '417', 'volume': '41', 'author': 'Hong', 'year': '2002', 'journal-title': 'J. Kor. Phys. Soc.'} / J. Kor. Phys. Soc. by Hong (2002)
{'key': 'S0884291400064244_ref005', 'first-page': '219', 'volume-title': 'Proc. of Advanced Metallization Conference 1999', 'author': 'Kondoh', 'year': '2000'} / Proc. of Advanced Metallization Conference 1999 by Kondoh (2000)
10.1063/1.1345801
10.1007/s11664-002-0132-5
10.1063/1.123130
10.1116/1.1333080
10.5006/1.3585230
10.1063/1.1314879
10.1016/0040-6090(80)90244-8
10.1116/1.1327300

Dates

Type	When
Created	17 years, 5 months ago (March 5, 2008, 9:46 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:13 p.m.)
Indexed	1 year, 10 months ago (Oct. 14, 2023, 6:22 a.m.)
Issued	22 years, 3 months ago (June 1, 2003)
Published	22 years, 3 months ago (June 1, 2003)
Published Online	14 years, 7 months ago (Jan. 31, 2011)
Published Print	22 years, 3 months ago (June 1, 2003)

Funders 0

None

BibTeX

@article{Lee_2003, title={Adhesion, passivation, and resistivity of a Ag(Mg) gate electrode for an amorphous silicon thin-film transistor}, volume={18}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2003.0198}, DOI={10.1557/jmr.2003.0198}, number={6}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Lee, Jaegab and Yang, Heejung and Lee, Jinhyung and Shin, Hyunjung and Kim, Jiyoung and Jeong, Changoh and Cho, Beomseok and Chung, Kyuha and Lee, Eungu}, year={2003}, month=jun, pages={1441–1446} }

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