DOI: 10.1557/jmr.2003.0003. Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

10.1557/jmr.2003.0003

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)2 and NH3 gas mixture. The Zn3N2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500 °C. When the annealing temperature reached 700 °C, a high-quality p-type ZnO film with a carrier density of 4.16 × 1017 cm−3 was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 1021 cm−3, which could be controlled by adjusting the parameters of the annealing processes.

Bibliography

Li, B. S., Liu, Y. C., Zhi, Z. Z., Shen, D. Z., Lu, Y. M., Zhang, J. Y., Fan, X. W., Mu, R. X., & Henderson, D. O. (2003). Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films. Journal of Materials Research, 18(1), 8â13.

Authors 9

B. S. Li (first)
Y. C. Liu (additional)
Z. Z. Zhi (additional)
D. Z. Shen (additional)
Y. M. Lu (additional)
J. Y. Zhang (additional)
X. W. Fan (additional)
R. X. Mu (additional)
Don O. Henderson (additional)

References 29 Referenced 90

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{'key': 'S088429140006372X_ref018', 'first-page': '501', 'volume': '20', 'author': 'Li', 'year': '2002', 'journal-title': 'J. Vac. Sci. Technol. A'} / J. Vac. Sci. Technol. A by Li (2002)
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Dates

Type	When
Created	17 years, 6 months ago (Feb. 7, 2008, 9:39 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 3:12 p.m.)
Indexed	1 year, 1 month ago (July 17, 2024, 9:53 a.m.)
Issued	22 years, 7 months ago (Jan. 1, 2003)
Published	22 years, 7 months ago (Jan. 1, 2003)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	22 years, 7 months ago (Jan. 1, 2003)

Funders 0

None

BibTeX

@article{Li_2003, title={Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films}, volume={18}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2003.0003}, DOI={10.1557/jmr.2003.0003}, number={1}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Li, B. S. and Liu, Y. C. and Zhi, Z. Z. and Shen, D. Z. and Lu, Y. M. and Zhang, J. Y. and Fan, X. W. and Mu, R. X. and Henderson, Don O.}, year={2003}, month=jan, pages={8–13} }

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