DOI: 10.1557/jmr.2001.0461. Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

10.1557/jmr.2001.0461

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

Bibliography

Lloyd, S. J., Molina-Aldareguia, J. M., & Clegg, W. J. (2001). Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy. Journal of Materials Research, 16(12), 3347â3350.

Authors 3

S. J. Lloyd (first)
J. M. Molina-Aldareguia (additional)
W. J. Clegg (additional)

References 21 Referenced 65

10.1557/JMR.1992.1564
10.1063/1.1332110
10.1103/PhysRevB.52.4072
10.1080/01418618708214371
10.1016/S0925-9635(00)00461-1
10.1038/271732a0
{'key': 'S0884291400059768_ref008', 'volume-title': 'Landolt Börnstein, New Series', 'volume': '4', 'author': 'Beggerow', 'year': '1980'} / Landolt Börnstein, New Series by Beggerow (1980)
10.1080/01418610008216494
10.1063/1.1372207
10.1116/1.590202
{'key': 'S0884291400059768_ref017', 'volume-title': 'Semiconductors. Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series', 'author': 'Madelung', 'year': '1982'} / Semiconductors. Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series by Madelung (1982)
10.1063/1.364340
10.1557/JMR.1991.1129
10.1017/S1431927600017207 / Microscopy and Microanalysis by Lloyd (1999)
10.1016/S0081-1947(08)60031-4
{'key': 'S0884291400059768_ref020', 'volume-title': 'Semiconductors, Landolt-Börnstein, New Series, Group III', 'author': 'Madelung', 'year': '1987'} / Semiconductors, Landolt-Börnstein, New Series, Group III by Madelung (1987)
10.1016/S0301-679X(99)00103-6
10.1557/JMR.2000.0253
10.1557/JMR.1994.2907
10.1080/095008399177183
10.1103/PhysRevLett.60.2156

Dates

Type	When
Created	17 years, 5 months ago (March 5, 2008, 9:41 p.m.)
Deposited	3 years, 11 months ago (Sept. 5, 2021, 5:03 a.m.)
Indexed	1 month, 2 weeks ago (July 7, 2025, 8:46 p.m.)
Issued	23 years, 8 months ago (Dec. 1, 2001)
Published	23 years, 8 months ago (Dec. 1, 2001)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	23 years, 8 months ago (Dec. 1, 2001)

Funders 0

None

BibTeX

@article{Lloyd_2001, title={Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy}, volume={16}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2001.0461}, DOI={10.1557/jmr.2001.0461}, number={12}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Lloyd, S. J. and Molina-Aldareguia, J. M. and Clegg, W. J.}, year={2001}, month=dec, pages={3347–3350} }

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