DOI: 10.1557/jmr.2000.0209. Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers

Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers

10.1557/jmr.2000.0209

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

In the present work we studied the depth of damage layer in machined silicon wafers that was incorporated with chemical etching using micro-Raman spectroscopy. Subsurface damage causes changes in the shape and intensity for the shoulder (450–570 cm−1) of the most intense band (519 cm−1) and the second band (300 cm−1) regions of the Raman spectrum. Etching reduces the thickness of the damage layer and, hence, the intensities at the shoulder and the second band. The intensities at the shoulder and the second band become stable when the damage layer is completely etched out. The shoulder consists of two Gaussian profiles: the major and the minor. The band for the major profile is independent of etching depth, but the band for the minor profile shifts toward the longer wave numbers with increasing etching period until the damage layer is completely etched out. The depth of the damage layer is determined by the profiles of the shoulder and the second band and confirmed by the band shift of the minor profile. Transmission electron microscopy (TEM) further verified the results with respect to the depth of the damage layer. TEM observation showed that dislocations and stacking faults are responsible for the subsurface damage.

Bibliography

Chen, L.-Q., Zhang, X., Zhang, T.-Y., Lin, H. Y., & Lee, S. (2000). Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers. Journal of Materials Research, 15(7), 1441â1444.

Authors 5

Long-Qing Chen (first)
Xin Zhang (additional)
Tong-Yi Zhang (additional)
H. Y. Lin (additional)
Sanboh Lee (additional)

References 18 Referenced 17

{'key': 'S0884291400055497_ref006', 'first-page': '603', 'volume': '5', 'author': 'Hashimoto', 'year': '1984', 'journal-title': 'Proc. Int. Conf. Prod. Eng.'} / Proc. Int. Conf. Prod. Eng. by Hashimoto (1984)
10.1016/S0007-8506(07)62999-0
10.1016/0141-6359(89)90031-7
10.1088/0268-1242/9/4/012
10.1080/10408438808244783
10.1016/0141-6359(88)90053-0
10.1016/S0007-8506(07)60751-3
10.1111/j.1151-2916.1988.tb06378.x
10.1103/PhysRevB.5.580
10.1063/1.341831
10.1016/0038-1098(84)90574-X
10.1080/00150199008223827 / Ferroelectrics by Dearaujo (1990)
{'key': 'S0884291400055497_ref014', 'first-page': '23', 'volume-title': 'Materials Characterization', 'volume': '69', 'author': 'Nemanich', 'year': '1986'} / Materials Characterization by Nemanich (1986)
10.1016/0141-6359(94)90199-6
10.1117/12.941927
10.1063/1.351310
10.1016/0038-1098(70)90588-0
10.1016/S0007-8506(07)60185-1

Dates

Type	When
Created	17 years, 5 months ago (March 5, 2008, 9:36 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:17 p.m.)
Indexed	1 year ago (Aug. 7, 2024, 9:51 a.m.)
Issued	25 years, 1 month ago (July 1, 2000)
Published	25 years, 1 month ago (July 1, 2000)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	25 years, 1 month ago (July 1, 2000)

Funders 0

None

BibTeX

@article{Chen_2000, title={Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers}, volume={15}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.2000.0209}, DOI={10.1557/jmr.2000.0209}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Chen, Long-Qing and Zhang, Xin and Zhang, Tong-Yi and Lin, H. Y. and Lee, Sanboh}, year={2000}, month=jul, pages={1441–1444} }

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