DOI: 10.1557/jmr.1998.0362. High-temperature Creep Resistance in Rare-earth-doped, Fine-grained Al<sub>2</sub>O<sub>3</sub>

High-temperature Creep Resistance in Rare-earth-doped, Fine-grained Al2O3

10.1557/jmr.1998.0362

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

High-temperature creep in undoped Al2O3 and La2O3- or Y2O3- or Lu2O3-doped Al2O3 with a grain size of about 1 µm is examined in uniaxial compression testing at temperatures between 1150 and 1350 °C. The high-temperature creep resistance in Al2O3 is highly improved by the rare-earth oxide doping in the level of 0.045 mol %, and the creep rate is suppressed in the order La2O3 <Y2O3 <Lu2O3. Rare-earth ions in each doped Al2O3 are found to segregate in Al2O3 grain boundaries without forming amorphous phase or second-phase particles. The activation energy for creep in undoped Al2O3 is estimated to be 410 kJ/mol, while it is about 800 kJ/mol in the three rare-earth oxide-doped Al2O3. The grain boundary diffusivity must be highly reduced by the segregation of the dopant cation in Al2O3 grain boundaries.

Bibliography

Yoshida, H., Ikuhara, Y., & Sakuma, T. (1998). High-temperature Creep Resistance in Rare-earth-doped, Fine-grained Al2O3. Journal of Materials Research, 13(9), 2597â2601.

Authors 3

H. Yoshida (first)
Y. Ikuhara (additional)
T. Sakuma (additional)

References 27 Referenced 115

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{'key': 'S0884291400045982_ref013', 'first-page': '425', 'volume-title': 'Proceedings of the 1997 International Conference on Superplasticity in Advanced Materials', 'author': 'Takigawa', 'year': '1997'} / Proceedings of the 1997 International Conference on Superplasticity in Advanced Materials by Takigawa (1997)
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Dates

Type	When
Created	17 years, 5 months ago (March 13, 2008, 6:42 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:07 p.m.)
Indexed	3 months ago (May 27, 2025, 11:02 a.m.)
Issued	26 years, 11 months ago (Sept. 1, 1998)
Published	26 years, 11 months ago (Sept. 1, 1998)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	26 years, 11 months ago (Sept. 1, 1998)

Funders 0

None

BibTeX

@article{Yoshida_1998, title={High-temperature Creep Resistance in Rare-earth-doped, Fine-grained Al2O3}, volume={13}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1998.0362}, DOI={10.1557/jmr.1998.0362}, number={9}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Yoshida, H. and Ikuhara, Y. and Sakuma, T.}, year={1998}, month=sep, pages={2597–2601} }

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  "abstract": "<jats:p>High-temperature creep in undoped Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>- or Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>- or Lu<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>-doped Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> with a grain size of about 1 \u00b5m is examined in uniaxial compression testing at temperatures between 1150 and 1350 \u00b0C. The high-temperature creep resistance in Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is highly improved by the rare-earth oxide doping in the level of 0.045 mol %, and the creep rate is suppressed in the order La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> &lt;Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> &lt;Lu<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Rare-earth ions in each doped Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> are found to segregate in Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> grain boundaries without forming amorphous phase or second-phase particles. The activation energy for creep in undoped Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> is estimated to be 410 kJ/mol, while it is about 800 kJ/mol in the three rare-earth oxide-doped Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. The grain boundary diffusivity must be highly reduced by the segregation of the dopant cation in Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> grain boundaries.</jats:p>",
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