DOI: 10.1557/jmr.1998.0321. Microstructural characteristics of conductive SrRuO<sub>3</sub> thin films formed by pulsed-laser deposition

Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition

10.1557/jmr.1998.0321

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

Transmission electron microscopy and high-resolution electron microscopy have been used to study microstructural properties of conductive SrRuO3 films grown by pulsed laser deposition on (001) LaAlO3 and (001) SrTiO3 substrates. It was found that the SrRuO3 films deposited on both substrates consist of mixed domains of [001] and [110] orientations, with orientation relationships that can be described as (i) (001)f ‖ (001)s and [110]f ‖ [100]s and (ii) (110)f ‖ (001)s and [001]f ‖ [100]s, respectively. The SrRuO3 films deposited on SrTiO3, in particular, were found to have a layered domain structure, with the [110] domain grown initially on the substate, followed by growth of the [001] oriented domain with increasing thickness. The films on SrTiO3 are strained and have a coherent interface with the substrate. The SrRuO3 films deposited on LaAlO3, on the other hand, contain a high density of structural defects such as stacking faults and microtwins on the (022) planes. Microtwins as large as 50 nm in thickness are observed in the films deposited on LaAlO3. Possible causes for the observed structural defects in the films are discussed.

Bibliography

Lu, P., Chu, F., Jia, Q. X., & Mitchell, T. E. (1998). Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition. Journal of Materials Research, 13(8), 2302â2307.

Authors 4

P. Lu (first)
F. Chu (additional)
Q. X. Jia (additional)
T. E. Mitchell (additional)

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Dates

Type	When
Created	17 years, 6 months ago (March 5, 2008, 9:23 p.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 5:07 p.m.)
Indexed	11 months, 3 weeks ago (Sept. 9, 2024, 4:39 p.m.)
Issued	27 years, 1 month ago (Aug. 1, 1998)
Published	27 years, 1 month ago (Aug. 1, 1998)
Published Online	14 years, 7 months ago (Jan. 31, 2011)
Published Print	27 years, 1 month ago (Aug. 1, 1998)

Funders 0

None

BibTeX

@article{Lu_1998, title={Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition}, volume={13}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1998.0321}, DOI={10.1557/jmr.1998.0321}, number={8}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Lu, P. and Chu, F. and Jia, Q. X. and Mitchell, T. E.}, year={1998}, month=aug, pages={2302–2307} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        9,
        9
      ]
    ],
    "date-time": "2024-09-09T20:39:06Z",
    "timestamp": 1725914346067
  },
  "reference-count": 28,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "8",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            1,
            31
          ]
        ],
        "date-time": "2011-01-31T00:00:00Z",
        "timestamp": 1296432000000
      },
      "content-version": "unspecified",
      "delay-in-days": 4566,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        8
      ]
    ]
  },
  "abstract": "<jats:p>Transmission electron microscopy and high-resolution electron microscopy have been used to study microstructural properties of conductive SrRuO<jats:sub>3</jats:sub> films grown by pulsed laser deposition on (001) LaAlO<jats:sub>3</jats:sub> and (001) SrTiO<jats:sub>3</jats:sub> substrates. It was found that the SrRuO<jats:sub>3</jats:sub> films deposited on both substrates consist of mixed domains of [001] and [110] orientations, with orientation relationships that can be described as (i) (001)<jats:sub><jats:italic>f</jats:italic></jats:sub> \u2016 (001)<jats:sub><jats:italic>s</jats:italic></jats:sub> and [110]<jats:sub><jats:italic>f</jats:italic></jats:sub> \u2016 [100]<jats:sub><jats:italic>s</jats:italic></jats:sub> and (ii) (110)<jats:sub><jats:italic>f</jats:italic></jats:sub> \u2016 (001)<jats:sub><jats:italic>s</jats:italic></jats:sub> and [001]<jats:sub><jats:italic>f</jats:italic></jats:sub> \u2016 [100]<jats:sub><jats:italic>s</jats:italic></jats:sub>, respectively. The SrRuO<jats:sub>3</jats:sub> films deposited on SrTiO<jats:sub>3</jats:sub>, in particular, were found to have a layered domain structure, with the [110] domain grown initially on the substate, followed by growth of the [001] oriented domain with increasing thickness. The films on SrTiO<jats:sub>3</jats:sub> are strained and have a coherent interface with the substrate. The SrRuO<jats:sub>3</jats:sub> films deposited on LaAlO<jats:sub>3</jats:sub>, on the other hand, contain a high density of structural defects such as stacking faults and microtwins on the (022) planes. Microtwins as large as 50 nm in thickness are observed in the films deposited on LaAlO<jats:sub>3</jats:sub>. Possible causes for the observed structural defects in the films are discussed.</jats:p>",
  "DOI": "10.1557/jmr.1998.0321",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2008,
        3,
        6
      ]
    ],
    "date-time": "2008-03-06T02:23:43Z",
    "timestamp": 1204770223000
  },
  "page": "2302-2307",
  "source": "Crossref",
  "is-referenced-by-count": 26,
  "title": "Microstructural characteristics of conductive SrRuO<sub>3</sub> thin films formed by pulsed-laser deposition",
  "prefix": "10.1557",
  "volume": "13",
  "author": [
    {
      "given": "P.",
      "family": "Lu",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "F.",
      "family": "Chu",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Q. X.",
      "family": "Jia",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "T. E.",
      "family": "Mitchell",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        1,
        31
      ]
    ]
  },
  "reference": [
    {
      "key": "S088429140004557X_ref026",
      "unstructured": "26. Read W. T. J. , in Dislocations in Crystal (1953)."
    },
    {
      "key": "S088429140004557X_ref025",
      "doi-asserted-by": "publisher",
      "DOI": "10.1107/S0365110X58002462"
    },
    {
      "key": "S088429140004557X_ref023",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/JMR.1992.1993"
    },
    {
      "key": "S088429140004557X_ref022",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/JMR.1990.2049"
    },
    {
      "key": "S088429140004557X_ref021",
      "unstructured": "21. Chu F. et al., unpublished."
    },
    {
      "key": "S088429140004557X_ref020",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0953-2048/7/5/012"
    },
    {
      "key": "S088429140004557X_ref019",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.109878"
    },
    {
      "key": "S088429140004557X_ref018",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s11664-996-0031-2"
    },
    {
      "key": "S088429140004557X_ref016",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.113945"
    },
    {
      "key": "S088429140004557X_ref015",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.110436"
    },
    {
      "key": "S088429140004557X_ref014",
      "doi-asserted-by": "publisher",
      "DOI": "10.1080/10584589208215562"
    },
    {
      "key": "S088429140004557X_ref010",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.110494"
    },
    {
      "key": "S088429140004557X_ref009",
      "first-page": "534",
      "volume": "64",
      "author": "Tiwari",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "S088429140004557X_ref007",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.258.5089.1766"
    },
    {
      "key": "S088429140004557X_ref006",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/JMR.1995.2401"
    },
    {
      "key": "S088429140004557X_ref005",
      "first-page": "5449",
      "volume": "77",
      "author": "Eom",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "S088429140004557X_ref004",
      "doi-asserted-by": "publisher",
      "DOI": "10.1006/jssc.1994.1032"
    },
    {
      "key": "S088429140004557X_ref003",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.109313"
    },
    {
      "key": "S088429140004557X_ref002",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.109612"
    },
    {
      "key": "S088429140004557X_ref001",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.109474"
    },
    {
      "key": "S088429140004557X_ref027",
      "doi-asserted-by": "publisher",
      "DOI": "10.1080/14786436208212889"
    },
    {
      "key": "S088429140004557X_ref011",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/S0883769400047990"
    },
    {
      "key": "S088429140004557X_ref008",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.109388"
    },
    {
      "key": "S088429140004557X_ref012",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.106432"
    },
    {
      "key": "S088429140004557X_ref017",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/JMR.1996.0287"
    },
    {
      "key": "S088429140004557X_ref013",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.252.5008.944"
    },
    {
      "key": "S088429140004557X_ref024",
      "first-page": "65",
      "volume-title": "Ferroelectric Thin Films",
      "volume": "200",
      "author": "Ameen",
      "year": "1990"
    },
    {
      "key": "S088429140004557X_ref028",
      "doi-asserted-by": "publisher",
      "DOI": "10.1080/14786436408224212"
    }
  ],
  "container-title": "Journal of Materials Research",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S088429140004557X",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T22:07:19Z",
    "timestamp": 1614204439000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/JMR.1998.0321"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        8
      ]
    ]
  },
  "references-count": 28,
  "journal-issue": {
    "issue": "8",
    "published-print": {
      "date-parts": [
        [
          1998,
          8
        ]
      ]
    }
  },
  "alternative-id": [
    "S088429140004557X"
  ],
  "URL": "http://dx.doi.org/10.1557/JMR.1998.0321",
  "relation": {},
  "ISSN": [
    "0884-2914",
    "2044-5326"
  ],
  "subject": [],
  "container-title-short": "J. Mater. Res.",
  "published": {
    "date-parts": [
      [
        1998,
        8
      ]
    ]
  }
}