Abstract
Thermal stresses in thin Cu films on silicon substrates were examined as a function of film thickness and presence of a silicon nitride passivation layer. At room temperature, tensile stresses increased with decreasing film thickness in qualitative agreement with a dislocation constraint model. However, in order to predict the stress levels, grain-size strengthening, which is shown to follow a Hall–Petch relation, must be superimposed. An alternative explanation is strain-hardening due to the increase in dislocation density, which was measured by x-ray diffraction. At 600 °C, the passivation increases the stress by an order of magnitude; this leads to a substantially different shape of the stress-temperature curves, which now resemble those of aluminum with only a native oxide layer. The effect of passivation is shown to be very sensitive to the deposition and test conditions.
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Dates
Type | When |
---|---|
Created | 17 years, 5 months ago (March 13, 2008, 6:41 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 5:06 p.m.) |
Indexed | 3 months, 1 week ago (May 21, 2025, 4:25 p.m.) |
Issued | 27 years, 3 months ago (May 1, 1998) |
Published | 27 years, 3 months ago (May 1, 1998) |
Published Online | 14 years, 7 months ago (Jan. 31, 2011) |
Published Print | 27 years, 3 months ago (May 1, 1998) |
@article{Keller_1998, title={Quantitative analysis of strengthening mechanisms in thin Cu films: Effects of film thickness, grain size, and passivation}, volume={13}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1998.0186}, DOI={10.1557/jmr.1998.0186}, number={5}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Keller, R-M. and Baker, S. P. and Arzt, E.}, year={1998}, month=may, pages={1307–1317} }