Abstract
A study was made of the thermal properties of low pressure chemical vapor deposition (LPCVD) silicon thin films with amorphous and polycrystalline microstructures, produced by varying the substrate temperature. Thermal diffusivity measurements were conducted using a thermal wave technique. The thermal diffusivity of the polycrystalline films was found to be about three times that of the amorphous films, but about one eighth that of bulk silicon single crystals. There was also an indication that the diffusivity increased with deposition temperature above the transition temperature from the amorphous to the polycrystalline state. The relationships between the thermal properties and microstructural features, such as grain size and grain boundary, are discussed.
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Dates
Type | When |
---|---|
Created | 17 years, 11 months ago (Sept. 27, 2007, 8:25 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:56 p.m.) |
Indexed | 2 months, 1 week ago (June 24, 2025, 12:30 p.m.) |
Issued | 30 years, 1 month ago (Aug. 1, 1995) |
Published | 30 years, 1 month ago (Aug. 1, 1995) |
Published Online | 14 years, 6 months ago (March 3, 2011) |
Published Print | 30 years, 1 month ago (Aug. 1, 1995) |
@article{Wei_1995, title={Heat conduction in silicon thin films: Effect of microstructure}, volume={10}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1995.1889}, DOI={10.1557/jmr.1995.1889}, number={8}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Wei, Lanhua and Vaudin, Mark and Hwang, Cheol Song and White, Grady and Xu, Jason and Steckl, Andrew J.}, year={1995}, month=aug, pages={1889–1896} }